Mosfet Array 2 N-Channel (Dual) 100V 2.7A 1.6W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 100V 2.7A 1.6W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 100V 2.7A 1.6W Surface Mount 8-SOIC
MOSFETs 100V Dual N-Channel PowerTrench MOSFET Product overview: FDS89161 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Dual, 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 100V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDS89161 can be used for catalog matching and distributor lookup.
MOSFET 100V Dual N-Channel PowerTrench MOSFET
MOSFET 2N-CH 100V 2.7A 8-SOIC
MOSFET 2N-CH 100V 2.7A 8SOIC
MOSFET 2N-CH 100V 2.7A 8SOIC
| DigiKey | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Utmel Electronic Limited | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDS89161CT-ND | 2088-FDS89161 | FDS89161 | 598-FDS89161 | FDS89161 | FDS89161 |
| Product Name | FET, MOSFET Arrays | N-Channel Dual 100V MOSFET Transistor | MOSFET | MOSFET 2N-CH 100V 2.7A 8-SOIC | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | Reel | 8-SOIC (0.154", 3.90mm Width) | |||
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | ||||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | ||||
| Transconductance | 0.0050 kS | |||||
| PD | 3.1 milliwatts | 3100 milliwatts |
