MOSFETs 30V N-Channel PwrTrench MOSFET Product overview: FDS8884 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDS8884 can be used for catalog matching and distributor lookup.
N-Channel 30V 8.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
N-Channel 30V 8.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
N-Channel 30V 8.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016201-FDS8884
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8.5A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 13nC @ 10V
Max Input Capacitance: 635pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 23 mOhm @ 8.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Sufficient
Quantity per package: 2,500
MOSFET N-CH 30V 8.5A 8SOIC
MOSFET, N-CHANNEL, 30V, 8.5A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:8.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power RoHS Compliant: Yes
N CHANNEL MOSFET, 30V, 8.5A, SOIC, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7VRoHS Compliant: Yes
N CHANNEL MOSFET, 30V, 8.5A, SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.5A; On Resistance Rds(on):0.023ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
MOSFET N-CH 30V 8.5A 8SOIC
MOSFET 30V N-Channel PwrTrench MOSFET
POWER FIELD-EFFECT TRANSISTOR, 8.5A I(D), 30V, 0.023OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOIC-8. FREE 2 YEAR RADWELL WARRANTY
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | ODG (Origin Data Global) | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Radwell International | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 2088-FDS8884 | FDS8884CT-ND | 016201-FDS8884 | 6710722 | 6710722P | FDS8884 | 84Y9939 | 86K1396 | 67P3496 | FDS8884 | FDS8884 | 16130640 |
| Product Name | N-Channel 30V MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS8884 | MOSFETs | MOSFETs | Single FETs, MOSFETs | Mosfet, N-Channel, 30V, 8.5A, Soic-8; Transistor Polarity Onsemi | N Channel Mosfet, 30V, 8.5A, Soic, Full Reel; Channel Type Onsemi | N Channel Mosfet, 30V, 8.5A, Soic; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Transistor |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | Enhancement | ||||||||||
| PD | 2.5 milliwatts | 2500 milliwatts | 2500 milliwatts | |||||||||
| Package Type | Reel | "8-SOIC (0.154"", 3.90mm Width)" | SOT3; 8-SO | Soic | SOIC | 8-SOIC (0.154", 3.90mm Width) | TO-3 | TO-3 | TO-3 | 8-SOIC (0.154, 3.90mm Width) | ||
| Packing Method | Reel | Tape Reel; Reel - TR | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |
