MOSFET N-CH 30V 11.6A 8SOIC
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016200-FDS8880
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 11.6A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 1235pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10 mOhm @ 11.6A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Industrial
Quantity per package: 2,500
N-Channel 30V 11.6A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
N-Channel 30V 11.6A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
N-Channel 30V 11.6A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
N CHANNEL MOSFET, 30V, 11.6A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes
MOSFET Transistor, N Channel, 11.6 A, 30 V, 0.0079 ohm, 10 V, 2.5 V RoHS Compliant: Yes
N CHANNEL MOSFET, 30V, 11.6A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes
MOSFET 30V N-Ch PowerTrench MOSFET
MOSFET N-CH 30V 11.6A 8SOIC
| RS Components, Ltd. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 6710728 | FDS8880 | 016200-FDS8880 | FDS8880CT-ND | 75M2468 | 47T5049 | FDS8880 | FDS8880 |
| Product Name | MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS8880 | Single FETs, MOSFETs | N Channel Mosfet, 30V, 11.6A, Soic; Channel Type Onsemi | Mosfet Transistor, N Channel, 11.6 A, 30 V, 0.0079 Ohm, 10 V, 2.5 V Rohs Compliant Onsemi | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | |||||
| IDSS | 11600 milliamps | 11600 milliamps | 11600 milliamps | |||||
| rDS(on) | 0.0100 ohms | |||||||
| Package Type | SOIC | 8-SOIC (0.154", 3.90mm Width) | SOT3; 8-SO | "8-SOIC (0.154"", 3.90mm Width)" | TO-3 | TO-3 | 8-SOIC (0.154, 3.90mm Width) |
