N-Channel MOSFET 30V 10.2A 14mR SOIC Product overview: FDS8878 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 10.2A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 10.2A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDS8878 can be used for catalog matching and distributor lookup.
N-Channel 30V 10.2A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
N-Channel 30V 10.2A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
N-Channel 30V 10.2A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016199-FDS8878
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 10.2A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 26nC @ 10V
Max Input Capacitance: 897pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 14 mOhm @ 10.2A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Sufficient
Quantity per package: 2,500
MOSFET N-CH 30V 10.2A 8SOIC
MOSFET Transistor, N Channel, 10.2 A, 30 V, 0.011 ohm, 10 V, 2.5 V RoHS Compliant: Yes
N CHANNEL MOSFET, 30V, 10.2A, SOIC, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:10.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:2.5W RoHS Compliant: Yes
N CHANNEL MOSFET, 30V, 10.2A, SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:10.2A; On Resistance Rds(on):0.011ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
MOSFET 30V N-Ch PowerTrench MOSFET
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-FDS8878 | FDS8878TR-ND | 016199-FDS8878 | FDS8878 | 31Y1409 | 64K0985 | 67P3495 | FDS8878 |
| Product Name | N-Channel 30V 10.2A SOIC MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS8878 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Transistor, N Channel, 10.2 A, 30 V, 0.011 Ohm, 10 V, 2.5 V Rohs Compliant Onsemi | N Channel Mosfet, 30V, 10.2A, Soic, Full Reel; Channel Type Onsemi | N Channel Mosfet, 30V, 10.2A, Soic; Transistor Polarity Onsemi | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||
| PD | 2500 milliwatts | 2500 milliwatts | 2500 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SOT3; 8-SO | 8-SOIC (0.154, 3.90mm Width) | TO-3 | TO-3 | TO-3 |
