onsemi Single FETs, MOSFETs FDS8870

Description
N-Channel 30V 18A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Request a Quote Datasheet
Description
N-Channel 30V 18A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDS8870FSCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDS8870FSCT-ND
Single FETs, MOSFETs FDS8870FSCT-ND
N-Channel 30V 18A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

N-Channel 30V 18A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - FDS8870FSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDS8870FSTR-ND
Single FETs, MOSFETs FDS8870FSTR-ND
N-Channel 30V 18A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

N-Channel 30V 18A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Singapore
30V MOSFET Transistor
2088-FDS8870
30V MOSFET Transistor 2088-FDS8870
MOSFETs 30V N-Ch PowerTrench MOSFET Product overview: FDS8870 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDS8870 can be used for catalog matching and distributor lookup.

MOSFETs 30V N-Ch PowerTrench MOSFET Product overview: FDS8870 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDS8870 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - FDS8870 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDS8870
Single FETs, MOSFETs FDS8870
POWER FIELD-EFFECT TRANSISTOR, 1

POWER FIELD-EFFECT TRANSISTOR, 1

Supplier's Site Datasheet
Single FETs, MOSFETs - FDS8870 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDS8870
Single FETs, MOSFETs FDS8870
MOSFET N-CH 30V 18A 8SOIC

MOSFET N-CH 30V 18A 8SOIC

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS8870 - 016197-FDS8870 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS8870
016197-FDS8870
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS8870 016197-FDS8870
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016197-FDS8870 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 18A (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 112nC @ 10V Max Input Capacitance: 4615pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.2 mOhm @ 18A, 10V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited Application Field: Used in Power Management, Computers & Computer Peripherals Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016197-FDS8870
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 18A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 112nC @ 10V
Max Input Capacitance: 4615pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.2 mOhm @ 18A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management, Computers & Computer Peripherals
Quantity per package: 2,500

Buy Now Datasheet
Mosfet, N, So-8; Transistor Polarity Onsemi - 04M9113 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N, So-8; Transistor Polarity Onsemi
04M9113
Mosfet, N, So-8; Transistor Polarity Onsemi 04M9113
MOSFET, N, SO-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:18A; On Resistance Rds(on):0.0042ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V; No. of Pins:8Pins RoHS Compliant: Yes

MOSFET, N, SO-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:18A; On Resistance Rds(on):0.0042ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V; No. of Pins:8Pins RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS8870 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDS8870
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDS8870
MOSFET N-CH 30V 18A 8SOIC

MOSFET N-CH 30V 18A 8SOIC

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FDS8870
MOSFET FDS8870
MOSFET 30V N-Ch PowerTrench MOSFET

MOSFET 30V N-Ch PowerTrench MOSFET

Buy Now Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Win Source Electronics Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDS8870FSCT-ND 2088-FDS8870 FDS8870 016197-FDS8870 04M9113 FDS8870 FDS8870
Product Name Single FETs, MOSFETs 30V MOSFET Transistor Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS8870 Mosfet, N, So-8; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type "8-SOIC (0.154"", 3.90mm Width)" Reel 8-SOIC (0.154", 3.90mm Width) SOT3; 8-SO TO-3; SO-8 8-SOIC (0.154, 3.90mm Width)
MOSFET Operating Mode Enhancement
PD 2.5 milliwatts 2500 milliwatts 2500 milliwatts
Packing Method Reel Tape Reel; Reel - TR Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
Unlock Full Specs
to access all available technical data

Similar Products

GaAs Fet Switches - KS201 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 20 to 4000 MHz
View Details
Single IGBTs - 448-AIGB50N65H5ATMA1TR-ND - DigiKey
Infineon Technologies AG
Specs
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packing Method Tape Reel
Structure NPT
View Details
5 suppliers