N-Channel 30V 18A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
N-Channel 30V 18A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016197-FDS8870
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 18A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 112nC @ 10V
Max Input Capacitance: 4615pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.2 mOhm @ 18A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management, Computers & Computer Peripherals
Quantity per package: 2,500
POWER FIELD-EFFECT TRANSISTOR, 1
MOSFET N-CH 30V 18A 8SOIC
MOSFET N-CH 30V 18A 8SOIC
MOSFET 30V N-Ch PowerTrench MOSFET
MOSFET, N, SO-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:18A; On Resistance Rds(on):0.0042ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V; No. of Pins:8Pins RoHS Compliant: Yes
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDS8870FSCT-ND | 016197-FDS8870 | FDS8870 | FDS8870 | FDS8870 | 04M9113 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS8870 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N, So-8; Transistor Polarity Onsemi |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | |||
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SOT3; 8-SO | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154, 3.90mm Width) | TO-3; SO-8 | |
| V(BR)DSS | 30 volts | 30 volts | ||||
| PD | 2500 milliwatts | 2500 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
