onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS8690 FDS8690

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016194-FDS8690 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 14A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 27nC @ 10V Max Input Capacitance: 1680pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7.6 mOhm @ 14A, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Sufficient Quantity per package: 2,500
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016194-FDS8690 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 14A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 27nC @ 10V Max Input Capacitance: 1680pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7.6 mOhm @ 14A, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Sufficient Quantity per package: 2,500
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS8690 - 016194-FDS8690 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS8690
016194-FDS8690
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS8690 016194-FDS8690
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016194-FDS8690 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 14A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 27nC @ 10V Max Input Capacitance: 1680pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7.6 mOhm @ 14A, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Sufficient Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016194-FDS8690
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 14A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 27nC @ 10V
Max Input Capacitance: 1680pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.6 mOhm @ 14A, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Sufficient
Quantity per package: 2,500

Buy Now Datasheet
Single FETs, MOSFETs - FDS8690CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDS8690CT-ND
Single FETs, MOSFETs FDS8690CT-ND
N-Channel 30V 14A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

N-Channel 30V 14A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - FDS8690TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDS8690TR-ND
Single FETs, MOSFETs FDS8690TR-ND
N-Channel 30V 14A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

N-Channel 30V 14A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS8690 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDS8690
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDS8690
MOSFET N-CH 30V 14A 8SOIC

MOSFET N-CH 30V 14A 8SOIC

Supplier's Site
Mosfet Transistor, N Channel, 14 A, 30 V, 0.0063 Ohm, 10 V, 1.6 V Rohs Compliant Onsemi - 95W3186 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 14 A, 30 V, 0.0063 Ohm, 10 V, 1.6 V Rohs Compliant Onsemi
95W3186
Mosfet Transistor, N Channel, 14 A, 30 V, 0.0063 Ohm, 10 V, 1.6 V Rohs Compliant Onsemi 95W3186
MOSFET Transistor, N Channel, 14 A, 30 V, 0.0063 ohm, 10 V, 1.6 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 14 A, 30 V, 0.0063 ohm, 10 V, 1.6 V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 016194-FDS8690 FDS8690CT-ND FDS8690 95W3186
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS8690 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet Transistor, N Channel, 14 A, 30 V, 0.0063 Ohm, 10 V, 1.6 V Rohs Compliant Onsemi
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 30 volts
PD 2500 milliwatts
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