MOSFET P-CH 150V 2.2A 8SOIC
Manufacturer: ON Semiconductor
Win Source Part Number: 843307-FDS86267P
Categories: Uncategorized
Popularity: Low
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance
(PRICE/TC),MOSFET, P-CH, -150V, -2.2A, SOIC-8, TRANSISTOR POLARITY:P CHANNEL, CONTINUOUS DRAIN CURRENT ID:-2.2A, DRAIN SOURCE VOLTAGE VDS:-150V, ON RESISTANCE RDS(ON):0.191OHM, RDS(ON) TEST VOLTAGE VGS:-10V, THRESHOLD VOLTAGE VGS:-3V, POWER ROHS COMPLIANT. FREE 2 YEAR RADWELL WARRANTY
P-Channel 150V 2.2A (Ta) 1W (Ta) Surface Mount 8-SOIC
P-Channel 150V 2.2A (Ta) 1W (Ta) Surface Mount 8-SOIC
P-Channel 150V 2.2A (Ta) 1W (Ta) Surface Mount 8-SOIC
MOSFET P-CH 150V 2.2A 8SOIC
MOSFET, P-CH, -150V, -2.2A, SOIC-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.2A; Drain Source Voltage Vds:-150V; On Resistance Rds(on):0.191ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power RoHS Compliant: Yes
MOSFET PT5 150V/20V Pch PowerTrench Mosfet
| ODG (Origin Data Global) | Win Source Electronics | Radwell International | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDS86267P | 843307-FDS86267P | 89106344 | FDS86267PCT-ND | FDS86267P | 46AC0811 | FDS86267P |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS86267P | Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, -150V, -2.2A, Soic-8; Transistor Polarity Onsemi | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 150 volts | ||||||
| IDSS | 2200 milliamps | -2200 milliamps | |||||
| PD | 1000 milliwatts |
