Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038428-FDS86252
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 4.5A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 955pF @ 75V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 55 mOhm @ 4.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
Quantity per package: 2,500
MOSFET N-CH 150V 4.5A 8SOIC
N-Channel 150V 4.5A (Ta) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC
N-Channel 150V 4.5A (Ta) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC
N-Channel 150V 4.5A (Ta) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC
MOSFET N-CH 150V 4.5A 8SOIC
MOSFET 150V N-Channel PowerTrench MOSFET
| Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1038428-FDS86252 | 7599695P | 7599695 | FDS86252 | FDS86252CT-ND | FDS86252 | FDS86252 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS86252 | MOSFETs | MOSFETs | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 150 volts | 150 volts | |||||
| PD | 2500 to 5000 milliwatts | 2500 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SOT3; 8-SO | SOIC | Soic | 8-SOIC (0.154", 3.90mm Width) | "8-SOIC (0.154"", 3.90mm Width)" | 8-SOIC (0.154, 3.90mm Width) |
