MOSFET N-CH 150V 4.1A 8SOIC
N-Channel 150V 4.1A (Ta) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC
N-Channel 150V 4.1A (Ta) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC
N-Channel 150V 4.1A (Ta) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038427-FDS86242
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Family Name: FDS86242
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 4.1A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 13nC @ 10V
Max Input Capacitance: 760pF @ 75V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 67 mOhm @ 4.1A, 10V
Alternative Parts (Cross-Reference): STS5N15F4; TPH5900CNH; TPH5900CNH,L1Q;
Introduction Date: April 24, 2008
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Sufficient
Quantity per package: 2,500
MOSFET N-CH 150V 4.1A 8SOIC
MOSFET 150V N-Channel PowerTrench MOSFET
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDS86242 | FDS86242DKR-ND | 1038427-FDS86242 | FDS86242 | FDS86242 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS86242 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 150 volts | 150 volts | |||
| IDSS | 4100 milliamps |