onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS7066N3 FDS7066N3

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204130-FDS7066N3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 23A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 69nC @ 5V Max Input Capacitance: 4973pF @ 15V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 5.5 mOhm @ 23A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204130-FDS7066N3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 23A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 69nC @ 5V Max Input Capacitance: 4973pF @ 15V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 5.5 mOhm @ 23A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS7066N3 - 204130-FDS7066N3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS7066N3
204130-FDS7066N3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS7066N3 204130-FDS7066N3
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204130-FDS7066N3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 23A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 69nC @ 5V Max Input Capacitance: 4973pF @ 15V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 5.5 mOhm @ 23A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204130-FDS7066N3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 23A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 69nC @ 5V
Max Input Capacitance: 4973pF @ 15V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 5.5 mOhm @ 23A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - FDS7066N3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDS7066N3-ND
Single FETs, MOSFETs FDS7066N3-ND
N-Channel 30V 23A (Ta) 3W (Ta) Surface Mount 8-SO

N-Channel 30V 23A (Ta) 3W (Ta) Surface Mount 8-SO

Buy Now Datasheet
Single FETs, MOSFETs - FDS7066N3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDS7066N3
Single FETs, MOSFETs FDS7066N3
MOSFET N-CH 30V 23A 8SO

MOSFET N-CH 30V 23A 8SO

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS7066N3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDS7066N3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDS7066N3
MOSFET N-CH 30V 23A 8SO

MOSFET N-CH 30V 23A 8SO

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 204130-FDS7066N3 FDS7066N3-ND FDS7066N3 FDS7066N3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS7066N3 Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 30 volts 30 volts
PD 3000 milliwatts 3000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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