onsemi Single FETs, MOSFETs FDS7064N7

Description
N-Channel 30V 16.5A (Ta) 3W (Ta) Surface Mount 8-SO
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Description
N-Channel 30V 16.5A (Ta) 3W (Ta) Surface Mount 8-SO
Request a Quote Datasheet

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Single FETs, MOSFETs - FDS7064N7TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDS7064N7TR-ND
Single FETs, MOSFETs FDS7064N7TR-ND
N-Channel 30V 16.5A (Ta) 3W (Ta) Surface Mount 8-SO

N-Channel 30V 16.5A (Ta) 3W (Ta) Surface Mount 8-SO

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS7064N7 - 099949-FDS7064N7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS7064N7
099949-FDS7064N7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS7064N7 099949-FDS7064N7
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 099949-FDS7064N7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Ta) Family Name: FDS7064N7 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 16.5A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 48nC @ 4.5V Max Input Capacitance: 3355pF @ 15V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 7 mOhm @ 16.5A, 4.5V Alternative Parts (Cross-Reference): IRF7809AVTR; IRF7809AV; IRF7457; Introduction Date: May 13, 2003 ECCN: EAR99 Estimated EOL Date: Obsolete Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Sufficient

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 099949-FDS7064N7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta)
Family Name: FDS7064N7
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 16.5A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 48nC @ 4.5V
Max Input Capacitance: 3355pF @ 15V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 7 mOhm @ 16.5A, 4.5V
Alternative Parts (Cross-Reference): IRF7809AVTR; IRF7809AV; IRF7457;
Introduction Date: May 13, 2003
ECCN: EAR99
Estimated EOL Date: Obsolete
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS7064N7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDS7064N7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDS7064N7
MOSFET N-CH 30V 16.5A 8SO

MOSFET N-CH 30V 16.5A 8SO

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDS7064N7TR-ND 099949-FDS7064N7 FDS7064N7
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS7064N7 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type "8-SOIC (0.154"", 3.90mm Width) Exposed Pad" SOT3; 8-SO 8-SOIC (0.154, 3.90mm Width) Exposed Pad
V(BR)DSS 30 volts
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