Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016187-FDS6994S
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.9A, 8.2A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 12nC @ 5V
Max Input Capacitance: 800pF @ 15V
Maximum Rds On at Id,Vgs: 21 mOhm @ 6.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance
MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC
6.9A, 30V, 0.021OHM, 2-ELEMENT,
Dual N-Ch MOSFET, 30V, 8.2A, 21mR, SOIC, SyncFET Product overview: FDS6994S from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 30V, 8.2A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 30V, 8.2A, SOIC, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-FDS6994S can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC
| Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 016187-FDS6994S | FDS6994S | 289-FDS6994S | FDS6994S |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6994S | FET, MOSFET Arrays | Dual 30V 8.2A SOIC MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | |
| V(BR)DSS | 30 volts | 30 volts | ||
| PD | 900 milliwatts | 900 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) |