onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6994S FDS6994S

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016187-FDS6994S Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 900mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6.9A, 8.2A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 12nC @ 5V Max Input Capacitance: 800pF @ 15V Maximum Rds On at Id,Vgs: 21 mOhm @ 6.9A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016187-FDS6994S Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 900mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6.9A, 8.2A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 12nC @ 5V Max Input Capacitance: 800pF @ 15V Maximum Rds On at Id,Vgs: 21 mOhm @ 6.9A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6994S - 016187-FDS6994S - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6994S
016187-FDS6994S
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6994S 016187-FDS6994S
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016187-FDS6994S Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 900mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6.9A, 8.2A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 12nC @ 5V Max Input Capacitance: 800pF @ 15V Maximum Rds On at Id,Vgs: 21 mOhm @ 6.9A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016187-FDS6994S
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.9A, 8.2A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 12nC @ 5V
Max Input Capacitance: 800pF @ 15V
Maximum Rds On at Id,Vgs: 21 mOhm @ 6.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore, Singapore
Dual 30V 8.2A SOIC MOSFET Transistor
289-FDS6994S
Dual 30V 8.2A SOIC MOSFET Transistor 289-FDS6994S
Dual N-Ch MOSFET, 30V, 8.2A, 21mR, SOIC, SyncFET Product overview: FDS6994S from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 30V, 8.2A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 30V, 8.2A, SOIC, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-FDS6994S can be used for catalog matching and distributor lookup.

Dual N-Ch MOSFET, 30V, 8.2A, 21mR, SOIC, SyncFET Product overview: FDS6994S from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 30V, 8.2A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 30V, 8.2A, SOIC, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-FDS6994S can be used for catalog matching and distributor lookup.

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS6994S - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDS6994S
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDS6994S
MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC

MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC

Supplier's Site
FET, MOSFET Arrays - FDS6994S - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
FDS6994S
FET, MOSFET Arrays FDS6994S
MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC

MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC

Supplier's Site
FET, MOSFET Arrays - FDS6994S - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
FDS6994S
FET, MOSFET Arrays FDS6994S
6.9A, 30V, 0.021OHM, 2-ELEMENT,

6.9A, 30V, 0.021OHM, 2-ELEMENT,

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 016187-FDS6994S 289-FDS6994S FDS6994S FDS6994S
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6994S Dual 30V 8.2A SOIC MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs FET, MOSFET Arrays
Polarity N-Channel N-Channel N-Channel; 2 N-Channel (Dual)
V(BR)DSS 30 volts 30 volts
PD 900 milliwatts 900 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
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