MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC
6.9A, 30V, 0.021OHM, 2-ELEMENT,
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016187-FDS6994S
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.9A, 8.2A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 12nC @ 5V
Max Input Capacitance: 800pF @ 15V
Maximum Rds On at Id,Vgs: 21 mOhm @ 6.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance
MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC
| ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDS6994S | 016187-FDS6994S | FDS6994S |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6994S | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||
| V(BR)DSS | 30 volts | 30 volts | |
| IDSS | 6900 milliamps |
