onsemi FET, MOSFET Arrays FDS6990A

Description
Mosfet Array 2 N-Channel (Dual) 30V 7.5A 900mW Surface Mount 8-SOIC
Request a Quote Datasheet
Description
Mosfet Array 2 N-Channel (Dual) 30V 7.5A 900mW Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - FDS6990ATR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDS6990ATR-ND
FET, MOSFET Arrays FDS6990ATR-ND
Mosfet Array 2 N-Channel (Dual) 30V 7.5A 900mW Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Dual) 30V 7.5A 900mW Surface Mount 8-SOIC

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6990A - 094101-FDS6990A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6990A
094101-FDS6990A
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6990A 094101-FDS6990A
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 094101-FDS6990A Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Family Name: FDS6990A Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 900mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 7.5A Gate-Source Threshold Voltage: 3V @ 1mA Max Gate Charge: 14nC @ 5V Max Input Capacitance: 550pF @ 15V Maximum Rds On at Id,Vgs: 22 mOhm @ 7.5A, 10V Alternative Parts (Cross-Reference): AO4824L; UPA2755GR-E2; AF4920NSA; AP6982GM-HF; Introduction Date: June 10, 1999 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 094101-FDS6990A
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: FDS6990A
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 7.5A
Gate-Source Threshold Voltage: 3V @ 1mA
Max Gate Charge: 14nC @ 5V
Max Input Capacitance: 550pF @ 15V
Maximum Rds On at Id,Vgs: 22 mOhm @ 7.5A, 10V
Alternative Parts (Cross-Reference): AO4824L; UPA2755GR-E2; AF4920NSA; AP6982GM-HF;
Introduction Date: June 10, 1999
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management
Quantity per package: 2,500

Buy Now Datasheet
Singapore
Dual SMD 30V 7.5A MOSFET Transistor
289-FDS6990A
Dual SMD 30V 7.5A MOSFET Transistor 289-FDS6990A
Dual N-Ch JFET 30V 7.5A 18mR SOIC Surface Mount Product overview: FDS6990A from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, SMD, 30V, 7.5A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, SMD, 30V, 7.5A, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-FDS6990A can be used for catalog matching and distributor lookup.

Dual N-Ch JFET 30V 7.5A 18mR SOIC Surface Mount Product overview: FDS6990A from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, SMD, 30V, 7.5A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, SMD, 30V, 7.5A, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-FDS6990A can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
FET, MOSFET Arrays - FDS6990A - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
FDS6990A
FET, MOSFET Arrays FDS6990A
MOSFET 2N-CH 30V 7.5A 8SOIC

MOSFET 2N-CH 30V 7.5A 8SOIC

Supplier's Site Datasheet
FET, MOSFET Arrays - FDS6990A - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
FDS6990A
FET, MOSFET Arrays FDS6990A
SMALL SIGNAL FIELD-EFFECT TRANSI

SMALL SIGNAL FIELD-EFFECT TRANSI

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET
FDS6990A
MOSFET FDS6990A
MOSFET SO-8 DUAL N-CH 30V

MOSFET SO-8 DUAL N-CH 30V

Buy Now Datasheet
Mosfet, N Channel, 30V, 7.5A, Soic-8; Transistor Polarity Onsemi - 29X6698 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 30V, 7.5A, Soic-8; Transistor Polarity Onsemi
29X6698
Mosfet, N Channel, 30V, 7.5A, Soic-8; Transistor Polarity Onsemi 29X6698
MOSFET, N CHANNEL, 30V, 7.5A, SOIC-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:7.5A; On Resistance Rds(on):0.011ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes

MOSFET, N CHANNEL, 30V, 7.5A, SOIC-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:7.5A; On Resistance Rds(on):0.011ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS6990A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDS6990A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDS6990A
MOSFET 2N-CH 30V 7.5A 8SOIC

MOSFET 2N-CH 30V 7.5A 8SOIC

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) ODG (Origin Data Global) VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDS6990ATR-ND 094101-FDS6990A 289-FDS6990A FDS6990A FDS6990A FDS6990A 29X6698 FDS6990A
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6990A Dual SMD 30V 7.5A MOSFET Transistor FET, MOSFET Arrays FET, MOSFET Arrays MOSFET Mosfet, N Channel, 30V, 7.5A, Soic-8; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3; 8-SO 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) TO-3
Polarity N-Channel N-Channel N-Channel; 2 N-Channel (Dual) N-Channel; 2 N-Channel (Dual) N-Channel
V(BR)DSS 30 volts 30 volts 30 volts
PD 900 milliwatts 900 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Unlock Full Specs
to access all available technical data

Similar Products

Single IGBTs - 92-0065-ND - DigiKey
Infineon Technologies AG
Specs
TJ -55 to 150 C (-67 to 302 F)
Package Type TO-220; TO-220-3
Packing Method Tube
View Details
2 suppliers
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - UF3SC065030B7S - Acme Chip Technology Co., Limited
Specs
Package Type 12V
Packing Method Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
View Details