Dual N-Ch JFET 30V 7.5A 18mR SOIC Surface Mount Product overview: FDS6990A from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, SMD, 30V, 7.5A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, SMD, 30V, 7.5A, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-FDS6990A can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual) 30V 7.5A 900mW Surface Mount 8-SOIC
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 094101-FDS6990A
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: FDS6990A
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 7.5A
Gate-Source Threshold Voltage: 3V @ 1mA
Max Gate Charge: 14nC @ 5V
Max Input Capacitance: 550pF @ 15V
Maximum Rds On at Id,Vgs: 22 mOhm @ 7.5A, 10V
Alternative Parts (Cross-Reference): AO4824L; UPA2755GR-E2; AF4920NSA; AP6982GM-HF;
Introduction Date: June 10, 1999
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management
Quantity per package: 2,500
MOSFET 2N-CH 30V 7.5A 8SOIC
MOSFET, N CHANNEL, 30V, 7.5A, SOIC-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:7.5A; On Resistance Rds(on):0.011ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
MOSFET 2N-CH 30V 7.5A 8SOIC
SMALL SIGNAL FIELD-EFFECT TRANSI
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | ODG (Origin Data Global) | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 289-FDS6990A | FDS6990ATR-ND | 094101-FDS6990A | FDS6990A | FDS6990A | 29X6698 | FDS6990A | FDS6990A |
| Product Name | Dual SMD 30V 7.5A MOSFET Transistor | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6990A | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N Channel, 30V, 7.5A, Soic-8; Transistor Polarity Onsemi | FET, MOSFET Arrays | FET, MOSFET Arrays |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel; 2 N-Channel (Dual) | |||
| PD | 900 milliwatts | 900 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SOT3; 8-SO | TO-3 | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | |||
| V(BR)DSS | 30 volts | 30 volts | 30 volts |
