Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016185-FDS6986AS
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.5A, 7.9A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 17nC @ 10V
Max Input Capacitance: 720pF @ 10V
Maximum Rds On at Id,Vgs: 29 mOhm @ 6.5A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Sufficient
Quantity per package: 2,500
MOSFET 2N-CH 30V 6.5A/7.9A 8SOIC Product overview: FDS6986AS from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 6.5A, 7.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 6.5A, 7.9A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-FDS6986AS can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 30V 6.5A/7.9A 8SOIC
Mosfet Array 2 N-Channel (Dual) 30V 6.5A, 7.9A 900mW Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 30V 6.5A, 7.9A 900mW Surface Mount 8-SOIC
MOSFET 2N-CH 30V 6.5A/7.9A 8SOIC
N CHANNEL MOSFET, 30V, 7.9mA, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:7.9A; On Resistance Rds(on):0.017ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
N CHANNEL MOSFET, 30V, 7.9mA; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:7.9A; On Resistance Rds(on):0.017ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Product Range:-RoHS Compliant: Yes
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 016185-FDS6986AS | 289-FDS6986AS | FDS6986AS | FDS6986ASTR-ND | FDS6986AS | 86K0209 | FDS6986AS |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6986AS | 30V 6.5A 7.9A MOSFET Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 30V, 7.9Ma, Full Reel; Transistor Polarity Onsemi | MOSFET |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | ||||
| V(BR)DSS | 30 volts | 30 volts | |||||
| PD | 900 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3; 8-SO | Bulk | 8-SOIC (0.154", 3.90mm Width) | "8-SOIC (0.154"", 3.90mm Width)" | TO-3 |
