Mosfet Array 2 N-Channel (Dual) 30V 6.3A, 8.6A 900mW Surface Mount 8-SOIC
MOSFET 2N-CH 30V 6.3A/8.6A 8-SO
Dual N-Ch MOSFET 30V 8.6A 28mR SOIC SM Product overview: FDS6982AS from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 30V, 8.6A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 30V, 8.6A, SOIC, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-FDS6982AS can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016183-FDS6982AS
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: FDS6982AS
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.3A, 8.6A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 610pF @ 10V
Maximum Rds On at Id,Vgs: 28 mOhm @ 6.3A, 10V
Alternative Parts (Cross-Reference): TPC8A01(TE12L); STS8DNH3LL; SH8KA2TB; ZXMN3G32DN8;
Introduction Date: December 14, 2004
ECCN: EAR99
Country of Origin: China, Japan, Malaysia, Philippines, Taiwan, Thailand, United States of America
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Consumer Electronics, Computers & Computer Peripherals
Quantity per package: 2,500
MOSFET, 30V, SOIC, TRANSISTOR POLARITY: DUAL N CHANNEL, CONTINUOUS DRAIN CURRENT ID:8.6A, DRAIN SOURCE VOLTAGE VDS:30V, ON RESISTANCE RDS(ON):0.011OHM, RDS(ON) TEST VOLTAGE VGS:10V, THRESHOLD VOLTAGE VGS:1.4V, ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET 2N-CH 30V 6.3A/8.6A 8SOIC
N CHANNEL MOSFET, 30V, SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.6A; On Resistance Rds(on):0.011ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
mOSFET, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.6A; On Resistance Rds(on):0.011ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation Pd:2W RoHS Compliant: Yes
| DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Radwell International | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDS6982ASTR-ND | FDS6982AS | 289-FDS6982AS | 016183-FDS6982AS | 16130568 | FDS6982AS | FDS6982AS | 64K0982 | 67R2080 |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | Dual 30V 8.6A SOIC MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6982AS | Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 30V, Soic; Transistor Polarity Onsemi | Mosfet, Full Reel; Transistor Polarity Onsemi |
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | 8-SOIC (0.154", 3.90mm Width) | SOT3; 8-SO | TO-3 | TO-3 | ||||
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | N-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 30 volts | 30 volts | |||||||
| IDSS | 6300 milliamps | 8600 milliamps | 8600 milliamps |
