MOSFET, 30V, SOIC, TRANSISTOR POLARITY: DUAL N CHANNEL, CONTINUOUS DRAIN CURRENT ID:8.6A, DRAIN SOURCE VOLTAGE VDS:30V, ON RESISTANCE RDS(ON):0.011OHM, RDS(ON) TEST VOLTAGE VGS:10V, THRESHOLD VOLTAGE VGS:1.4V, ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016183-FDS6982AS
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: FDS6982AS
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.3A, 8.6A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 610pF @ 10V
Maximum Rds On at Id,Vgs: 28 mOhm @ 6.3A, 10V
Alternative Parts (Cross-Reference): TPC8A01(TE12L); STS8DNH3LL; SH8KA2TB; ZXMN3G32DN8;
Introduction Date: December 14, 2004
ECCN: EAR99
Country of Origin: China, Japan, Malaysia, Philippines, Taiwan, Thailand, United States of America
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Consumer Electronics, Computers & Computer Peripherals
Quantity per package: 2,500
MOSFET 2N-CH 30V 6.3A/8.6A 8-SO
Mosfet Array 2 N-Channel (Dual) 30V 6.3A, 8.6A 900mW Surface Mount 8-SOIC
MOSFET 2N-CH 30V 6.3A/8.6A 8SOIC
N CHANNEL MOSFET, 30V, SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.6A; On Resistance Rds(on):0.011ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
mOSFET, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.6A; On Resistance Rds(on):0.011ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation Pd:2W RoHS Compliant: Yes
| Radwell International | Win Source Electronics | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 16130568 | 016183-FDS6982AS | FDS6982AS | FDS6982ASTR-ND | FDS6982AS | 64K0982 | 67R2080 | FDS6982AS |
| Product Name | Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6982AS | FET, MOSFET Arrays | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 30V, Soic; Transistor Polarity Onsemi | Mosfet, Full Reel; Transistor Polarity Onsemi | MOSFET |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | |||||
| V(BR)DSS | 30 volts | 30 volts | ||||||
| PD | 900 milliwatts | 2000 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Package Type | SOT3; 8-SO | 8-SOIC (0.154", 3.90mm Width) | "8-SOIC (0.154"", 3.90mm Width)" | TO-3 | TO-3 |
