Dual N-Ch MOSFET 30V 8.6A 28mR SOIC SM Product overview: FDS6982AS from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 30V, 8.6A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 30V, 8.6A, SOIC, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-FDS6982AS can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 30V 6.3A/8.6A 8-SO
Mosfet Array 2 N-Channel (Dual) 30V 6.3A, 8.6A 900mW Surface Mount 8-SOIC
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016183-FDS6982AS
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: FDS6982AS
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.3A, 8.6A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 610pF @ 10V
Maximum Rds On at Id,Vgs: 28 mOhm @ 6.3A, 10V
Alternative Parts (Cross-Reference): TPC8A01(TE12L); STS8DNH3LL; SH8KA2TB; ZXMN3G32DN8;
Introduction Date: December 14, 2004
ECCN: EAR99
Country of Origin: China, Japan, Malaysia, Philippines, Taiwan, Thailand, United States of America
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Consumer Electronics, Computers & Computer Peripherals
Quantity per package: 2,500
N CHANNEL MOSFET, 30V, SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.6A; On Resistance Rds(on):0.011ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
mOSFET, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.6A; On Resistance Rds(on):0.011ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation Pd:2W RoHS Compliant: Yes
MOSFET, 30V, SOIC, TRANSISTOR POLARITY: DUAL N CHANNEL, CONTINUOUS DRAIN CURRENT ID:8.6A, DRAIN SOURCE VOLTAGE VDS:30V, ON RESISTANCE RDS(ON):0.011OHM, RDS(ON) TEST VOLTAGE VGS:10V, THRESHOLD VOLTAGE VGS:1.4V, ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET 2N-CH 30V 6.3A/8.6A 8SOIC
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Radwell International | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors |
| Product Number | 289-FDS6982AS | FDS6982AS | FDS6982ASTR-ND | 016183-FDS6982AS | 64K0982 | 67R2080 | FDS6982AS | 16130568 | FDS6982AS |
| Product Name | Dual 30V 8.6A SOIC MOSFET Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6982AS | N Channel Mosfet, 30V, Soic; Transistor Polarity Onsemi | Mosfet, Full Reel; Transistor Polarity Onsemi | MOSFET | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | |||||
| PD | 2000 milliwatts | 900 milliwatts | 2000 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 30 volts | 30 volts |
