MOSFET 2N-CH 30V 5.5A 8SOIC
Mosfet Array 2 N-Channel (Dual) 30V 5.5A 900mW Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 30V 5.5A 900mW Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 30V 5.5A 900mW Surface Mount 8-SOIC
MOSFETs SO8 DUAL NCH LOGIC level POWER TRENCH Product overview: FDS6930B from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDS6930B can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016180-FDS6930B
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 5.5A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 3.8nC @ 5V
Max Input Capacitance: 412pF @ 15V
Maximum Rds On at Id,Vgs: 38 mOhm @ 5.5A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Sufficient
Quantity per package: 2,500
MOSFET SO8 DUAL NCH LOGIC level POWER TRENCH
N CHANNEL MOSFET, 30V, SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.5A; On Resistance Rds(on):0.031ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Product Range:- RoHS Compliant: Yes
Dual MOSFET, Dual N Channel, 5.5 A, 30 V, 0.031 ohm, 10 V, 1.9 V RoHS Compliant: Yes
N CHANNEL MOSFET, 30V, SOIC, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.5A; On Resistance Rds(on):0.031ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
MOSFET 2N-CH 30V 5.5A 8SOIC
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDS6930B | FDS6930BTR-ND | 2088-FDS6930B | 016180-FDS6930B | FDS6930B | 67P3489 | 31Y1403 | FDS6930B |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | Dual MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6930B | MOSFET | N Channel Mosfet, 30V, Soic; Transistor Polarity Onsemi | Dual Mosfet, Dual N Channel, 5.5 A, 30 V, 0.031 Ohm, 10 V, 1.9 V Rohs Compliant Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 30 volts | 30 volts | ||||||
| IDSS | 5500 milliamps | 5500 milliamps | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
