Mosfet Array 2 N-Channel (Dual) 30V 5.5A 900mW Surface Mount 8-SOIC
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016179-FDS6930A
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: FDS6930A
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 5.5A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 7nC @ 5V
Max Input Capacitance: 460pF @ 15V
Maximum Rds On at Id,Vgs: 40 mOhm @ 5.5A, 10V
Alternative Parts (Cross-Reference): TPC8209(TE12L); TSM4936DCS; AUIRF7303QTR; Si4936CDY;
Introduction Date: December 02, 1998
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Sufficient
Quantity per package: 2,500
DUAL N CHANNEL MOSFET, 30V, SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.5A; On Resistance Rds(on):0.032ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
MOSFET 2N-CH 30V 5.5A 8SOIC
| DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDS6930ATR-ND | 016179-FDS6930A | 38C7176 | FDS6930A | FDS6930A |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6930A | Dual N Channel Mosfet, 30V, Soic; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SOT3; 8-SO | TO-3 | ||
| Polarity | N-Channel | N-Channel | |||
| V(BR)DSS | 30 volts | ||||
| PD | 900 milliwatts |
