Mosfet Array 2 N-Channel (Dual) 30V 6A 900mW Surface Mount 8-SOIC
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067096-FDS6912
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 10nC @ 5V
Max Input Capacitance: 740pF @ 15V
Maximum Rds On at Id,Vgs: 28 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management
Quantity per package: 2,500
MOSFET 2N-CH 30V 6A 8SOIC
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDS6912TR-ND | 067096-FDS6912 | FDS6912 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6912 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SOT3; 8-SO | 8-SOIC (0.154, 3.90mm Width) |
| Polarity | N-Channel | ||
| V(BR)DSS | 30 volts |
