Mosfet Array 2 N-Channel (Dual) 30V 6.9A, 8.2A 900mW Surface Mount 8-SOIC
Dual N-Channel JFET, 30V, 8.2A, 27mR, SOIC, Tape & Reel Product overview: FDS6900AS from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Dual, 30V, 8.2A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 30V, 8.2A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-FDS6900AS can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016176-FDS6900AS
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.9A, 8.2A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 600pF @ 15V
Maximum Rds On at Id,Vgs: 27 mOhm @ 6.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Sufficient
Quantity per package: 2,500
MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC
MOSFET, DUAL, N, SMD, SO-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6.9A; On Resistance Rds(on):0.027ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
DISCONTINUED BY MANUFACTURER, SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 8.2A I(D), 30V, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SO-8. FREE 2 YEAR RADWELL WARRANTY
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Radwell International | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDS6900ASTR-ND | 289-FDS6900AS | 016176-FDS6900AS | FDS6900AS | 61M6320 | FDS6900AS | 38463158 |
| Product Name | FET, MOSFET Arrays | N-Channel Dual 30V 8.2A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6900AS | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Dual, N, Smd, So-8; Transistor Polarity Onsemi | MOSFET | Transistor |
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SOT3; 8-SO | TO-3; SO-8 | ||||
| Polarity | N-Channel | N-Channel | |||||
| PD | 2000 milliwatts | 900 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
