onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6900AS FDS6900AS

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016176-FDS6900AS Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 900mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6.9A, 8.2A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 600pF @ 15V Maximum Rds On at Id,Vgs: 27 mOhm @ 6.9A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Sufficient Quantity per package: 2,500
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6900AS - 016176-FDS6900AS - Win Source Electronics
    Win Source Electronics
  • FET, MOSFET Arrays - FDS6900ASTR-ND - DigiKey
    DigiKey
  • Transistor - 38463158 - Radwell International
    Radwell International
  • Mosfet, Dual, N, Smd, So-8; Transistor Polarity Onsemi - 61M6320 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS6900AS - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016176-FDS6900AS Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 900mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6.9A, 8.2A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 600pF @ 15V Maximum Rds On at Id,Vgs: 27 mOhm @ 6.9A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Sufficient Quantity per package: 2,500
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6900AS - 016176-FDS6900AS - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6900AS
016176-FDS6900AS
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6900AS 016176-FDS6900AS
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016176-FDS6900AS Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 900mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6.9A, 8.2A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 600pF @ 15V Maximum Rds On at Id,Vgs: 27 mOhm @ 6.9A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Sufficient Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016176-FDS6900AS
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.9A, 8.2A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 600pF @ 15V
Maximum Rds On at Id,Vgs: 27 mOhm @ 6.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Sufficient
Quantity per package: 2,500

Buy Now Datasheet
FET, MOSFET Arrays - FDS6900ASTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDS6900ASTR-ND
FET, MOSFET Arrays FDS6900ASTR-ND
Mosfet Array 2 N-Channel (Dual) 30V 6.9A, 8.2A 900mW Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Dual) 30V 6.9A, 8.2A 900mW Surface Mount 8-SOIC

Buy Now Datasheet
Transistor - 38463158 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
38463158
Transistor 38463158
DISCONTINUED BY MANUFACTURER, SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 8.2A I(D), 30V, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SO-8. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 8.2A I(D), 30V, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SO-8. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Mosfet, Dual, N, Smd, So-8; Transistor Polarity Onsemi - 61M6320 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Dual, N, Smd, So-8; Transistor Polarity Onsemi
61M6320
Mosfet, Dual, N, Smd, So-8; Transistor Polarity Onsemi 61M6320
MOSFET, DUAL, N, SMD, SO-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6.9A; On Resistance Rds(on):0.027ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

MOSFET, DUAL, N, SMD, SO-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6.9A; On Resistance Rds(on):0.027ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDS6900AS
MOSFET FDS6900AS
MOSFET Dual NCh PowerTrench

MOSFET Dual NCh PowerTrench

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS6900AS - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDS6900AS
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDS6900AS
MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC

MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Radwell International Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 016176-FDS6900AS FDS6900ASTR-ND 38463158 61M6320 FDS6900AS FDS6900AS
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6900AS FET, MOSFET Arrays Transistor Mosfet, Dual, N, Smd, So-8; Transistor Polarity Onsemi MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
V(BR)DSS 30 volts
PD 900 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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