onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6900AS FDS6900AS

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016176-FDS6900AS Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 900mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6.9A, 8.2A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 600pF @ 15V Maximum Rds On at Id,Vgs: 27 mOhm @ 6.9A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Sufficient Quantity per package: 2,500
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6900AS - 016176-FDS6900AS - Win Source Electronics
    Win Source Electronics
  • Transistor - 38463158 - Radwell International
    Radwell International
  • FET, MOSFET Arrays - FDS6900ASTR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS6900AS - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, Dual, N, Smd, So-8; Transistor Polarity Onsemi - 61M6320 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016176-FDS6900AS Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 900mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6.9A, 8.2A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 600pF @ 15V Maximum Rds On at Id,Vgs: 27 mOhm @ 6.9A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Sufficient Quantity per package: 2,500
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6900AS - 016176-FDS6900AS - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6900AS
016176-FDS6900AS
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6900AS 016176-FDS6900AS
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016176-FDS6900AS Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 900mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6.9A, 8.2A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 600pF @ 15V Maximum Rds On at Id,Vgs: 27 mOhm @ 6.9A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Sufficient Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016176-FDS6900AS
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.9A, 8.2A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 600pF @ 15V
Maximum Rds On at Id,Vgs: 27 mOhm @ 6.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Sufficient
Quantity per package: 2,500

Buy Now Datasheet
Transistor - 38463158 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
38463158
Transistor 38463158
DISCONTINUED BY MANUFACTURER, SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 8.2A I(D), 30V, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SO-8. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 8.2A I(D), 30V, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SO-8. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
FET, MOSFET Arrays - FDS6900ASTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDS6900ASTR-ND
FET, MOSFET Arrays FDS6900ASTR-ND
Mosfet Array 2 N-Channel (Dual) 30V 6.9A, 8.2A 900mW Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Dual) 30V 6.9A, 8.2A 900mW Surface Mount 8-SOIC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS6900AS - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDS6900AS
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDS6900AS
MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC

MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC

Supplier's Site
Mosfet, Dual, N, Smd, So-8; Transistor Polarity Onsemi - 61M6320 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Dual, N, Smd, So-8; Transistor Polarity Onsemi
61M6320
Mosfet, Dual, N, Smd, So-8; Transistor Polarity Onsemi 61M6320
MOSFET, DUAL, N, SMD, SO-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6.9A; On Resistance Rds(on):0.027ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

MOSFET, DUAL, N, SMD, SO-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6.9A; On Resistance Rds(on):0.027ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDS6900AS
MOSFET FDS6900AS
MOSFET Dual NCh PowerTrench

MOSFET Dual NCh PowerTrench

Buy Now Datasheet

Technical Specifications

  Win Source Electronics Radwell International DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 016176-FDS6900AS 38463158 FDS6900ASTR-ND FDS6900AS 61M6320 FDS6900AS
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6900AS Transistor FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, Dual, N, Smd, So-8; Transistor Polarity Onsemi MOSFET
Polarity N-Channel
V(BR)DSS 30 volts
PD 900 milliwatts
TJ -55 to 150 C (-67 to 302 F)
Unlock Full Specs
to access all available technical data