Mosfet Array 2 N-Channel (Dual) 20V 9.4A 900mW Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 20V 9.4A 900mW Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 20V 9.4A 900mW Surface Mount 8-SOIC
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016175-FDS6898AZ
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 9.4A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 23nC @ 4.5V
Max Input Capacitance: 1821pF @ 10V
Maximum Rds On at Id,Vgs: 14 mOhm @ 9.4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited
Quantity per package: 2,500
MOSFETs SO-8 Product overview: FDS6898AZ from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDS6898AZ can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 20V 9.4A 8SOIC
MOSFET 2N-CH 20V 9.4A 8SOIC
MOSFET, NN; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:9.4A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.014ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissipation Pd:2W; RoHS Compliant: Yes
MOSFET 2N-CH 20V 9.4A 8SOIC
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDS6898AZCT-ND | 016175-FDS6898AZ | 2088-FDS6898AZ | FDS6898AZ | FDS6898AZ | 598-FDS6898AZ | 47T5047 | FDS6898AZ |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6898AZ | MOSFET Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET 2N-CH 20V 9.4A 8SOIC | Mosfet, Nn; Transistor Polarity Onsemi | FET, MOSFET Arrays |
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SOT3; 8-SO | Reel | TO-3 | 8-SOIC (0.154", 3.90mm Width) | |||
| Polarity | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) | |||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | |||||
| PD | 900 milliwatts | 2 milliwatts | 2000 milliwatts | 2000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
