2 N-CH MOSFET 20V 7.5A 18mR SOIC SM Product overview: FDS6892AZ from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 7.5A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 7.5A, SOIC, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-FDS6892AZ can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204129-FDS6892AZ
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 7.5A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 17nC @ 4.5V
Max Input Capacitance: 1286pF @ 10V
Maximum Rds On at Id,Vgs: 18 mOhm @ 7.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited
Mosfet Array 2 N-Channel (Dual) 20V 7.5A 900mW Surface Mount 8-SOIC
MOSFET 2N-CH 20V 7.5A 8SOIC
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 289-FDS6892AZ | 204129-FDS6892AZ | FDS6892AZ-ND | FDS6892AZ |
| Product Name | 20V 7.5A SOIC MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6892AZ | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | ||
| PD | 900 milliwatts | 900 milliwatts | ||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |