Mosfet Array 2 N-Channel (Dual) 20V 7.5A 900mW Surface Mount 8-SOIC
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016173-FDS6892A
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 7.5A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 17nC @ 4.5V
Max Input Capacitance: 1333pF @ 10V
Maximum Rds On at Id,Vgs: 18 mOhm @ 7.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited
Quantity per package: 2,500
DUAL N CHANNEL MOSFET, 20V, SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:7.5A; On Resistance Rds(on):0.018ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:4.5V RoHS Compliant: Yes
MOSFET 2N-CH 20V 7.5A 8SOIC
| DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDS6892ATR-ND | 016173-FDS6892A | 82C2569 | FDS6892A | FDS6892A |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6892A | Dual N Channel Mosfet, 20V, Soic; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SOT3; 8-SO | TO-3 | ||
| Polarity | N-Channel | N-Channel | |||
| V(BR)DSS | 20 volts | ||||
| PD | 900 milliwatts |
