onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6892A FDS6892A

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016173-FDS6892A Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 900mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 7.5A Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 17nC @ 4.5V Max Input Capacitance: 1333pF @ 10V Maximum Rds On at Id,Vgs: 18 mOhm @ 7.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited Quantity per package: 2,500
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016173-FDS6892A Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 900mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 7.5A Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 17nC @ 4.5V Max Input Capacitance: 1333pF @ 10V Maximum Rds On at Id,Vgs: 18 mOhm @ 7.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited Quantity per package: 2,500
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6892A - 016173-FDS6892A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6892A
016173-FDS6892A
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6892A 016173-FDS6892A
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016173-FDS6892A Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 900mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 7.5A Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 17nC @ 4.5V Max Input Capacitance: 1333pF @ 10V Maximum Rds On at Id,Vgs: 18 mOhm @ 7.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016173-FDS6892A
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 7.5A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 17nC @ 4.5V
Max Input Capacitance: 1333pF @ 10V
Maximum Rds On at Id,Vgs: 18 mOhm @ 7.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited
Quantity per package: 2,500

Buy Now Datasheet
FET, MOSFET Arrays - FDS6892ATR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDS6892ATR-ND
FET, MOSFET Arrays FDS6892ATR-ND
Mosfet Array 2 N-Channel (Dual) 20V 7.5A 900mW Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Dual) 20V 7.5A 900mW Surface Mount 8-SOIC

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET
FDS6892A
MOSFET FDS6892A
MOSFET SO-8

MOSFET SO-8

Buy Now Datasheet
Dual N Channel Mosfet, 20V, Soic; Transistor Polarity Onsemi - 82C2569 - Newark, An Avnet Company
Chicago, IL, United States
Dual N Channel Mosfet, 20V, Soic; Transistor Polarity Onsemi
82C2569
Dual N Channel Mosfet, 20V, Soic; Transistor Polarity Onsemi 82C2569
DUAL N CHANNEL MOSFET, 20V, SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:7.5A; On Resistance Rds(on):0.018ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:4.5V RoHS Compliant: Yes

DUAL N CHANNEL MOSFET, 20V, SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:7.5A; On Resistance Rds(on):0.018ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:4.5V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS6892A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDS6892A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDS6892A
MOSFET 2N-CH 20V 7.5A 8SOIC

MOSFET 2N-CH 20V 7.5A 8SOIC

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 016173-FDS6892A FDS6892ATR-ND FDS6892A 82C2569 FDS6892A
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6892A FET, MOSFET Arrays MOSFET Dual N Channel Mosfet, 20V, Soic; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
V(BR)DSS 20 volts
PD 900 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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