Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016171-FDS6875
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: FDS6875
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 6A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 31nC @ 5V
Max Input Capacitance: 2250pF @ 10V
Maximum Rds On at Id,Vgs: 30 mOhm @ 6A, 4.5V
Alternative Parts (Cross-Reference): BSO204PNTMA1; HAT1054R-EL-E; TSM9933DCS RL;
Introduction Date: December 10, 1998
ECCN: EAR99
Country of Origin: China, Taiwan
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500
Mosfet Array 2 P-Channel (Dual) 20V 6A 900mW Surface Mount 8-SOIC
Mosfet Array 2 P-Channel (Dual) 20V 6A 900mW Surface Mount 8-SOIC
Mosfet Array 2 P-Channel (Dual) 20V 6A 900mW Surface Mount 8-SOIC
MOSFETs SO-8 DUAL P-CH -20V Product overview: FDS6875 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, -20V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, -20V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDS6875 can be used for catalog matching and distributor lookup.
MOSFET 2P-CH 20V 6A 8SOIC
DUAL P CHANNEL MOSFET, -20V, SOIC, FULL REEL; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6A; On Resistance Rds(on):0.024ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes
MOSFET 2P-CH 20V 6A 8SOIC
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 016171-FDS6875 | FDS6875CT-ND | 2088-FDS6875 | FDS6875 | 66K6764 | FDS6875 | FDS6875 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6875 | FET, MOSFET Arrays | Dual -20V MOSFET Transistor | FET, MOSFET Arrays | Dual P Channel Mosfet, -20V, Soic, Full Reel; Transistor Polarity Onsemi | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | P-Channel; 2 P-Channel (Dual) | P-Channel | |||
| V(BR)DSS | 20 volts | 20 volts | |||||
| PD | 900 milliwatts | 2 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SOT3; 8-SO | "8-SOIC (0.154"", 3.90mm Width)" | Reel | 8-SOIC (0.154", 3.90mm Width) | TO-3 |