onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6875 FDS6875

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016171-FDS6875 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Family Name: FDS6875 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 900mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 6A Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 31nC @ 5V Max Input Capacitance: 2250pF @ 10V Maximum Rds On at Id,Vgs: 30 mOhm @ 6A, 4.5V Alternative Parts (Cross-Reference): BSO204PNTMA1; HAT1054R-EL-E; TSM9933DCS RL; Introduction Date: December 10, 1998 ECCN: EAR99 Country of Origin: China, Taiwan Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance Quantity per package: 2,500
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016171-FDS6875 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Family Name: FDS6875 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 900mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 6A Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 31nC @ 5V Max Input Capacitance: 2250pF @ 10V Maximum Rds On at Id,Vgs: 30 mOhm @ 6A, 4.5V Alternative Parts (Cross-Reference): BSO204PNTMA1; HAT1054R-EL-E; TSM9933DCS RL; Introduction Date: December 10, 1998 ECCN: EAR99 Country of Origin: China, Taiwan Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance Quantity per package: 2,500
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6875 - 016171-FDS6875 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6875
016171-FDS6875
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6875 016171-FDS6875
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016171-FDS6875 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Family Name: FDS6875 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 900mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 6A Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 31nC @ 5V Max Input Capacitance: 2250pF @ 10V Maximum Rds On at Id,Vgs: 30 mOhm @ 6A, 4.5V Alternative Parts (Cross-Reference): BSO204PNTMA1; HAT1054R-EL-E; TSM9933DCS RL; Introduction Date: December 10, 1998 ECCN: EAR99 Country of Origin: China, Taiwan Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016171-FDS6875
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: FDS6875
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 6A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 31nC @ 5V
Max Input Capacitance: 2250pF @ 10V
Maximum Rds On at Id,Vgs: 30 mOhm @ 6A, 4.5V
Alternative Parts (Cross-Reference): BSO204PNTMA1; HAT1054R-EL-E; TSM9933DCS RL;
Introduction Date: December 10, 1998
ECCN: EAR99
Country of Origin: China, Taiwan
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500

Buy Now Datasheet
FET, MOSFET Arrays - FDS6875 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
FDS6875
FET, MOSFET Arrays FDS6875
MOSFET 2P-CH 20V 6A 8SOIC

MOSFET 2P-CH 20V 6A 8SOIC

Supplier's Site Datasheet
FET, MOSFET Arrays - FDS6875CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDS6875CT-ND
FET, MOSFET Arrays FDS6875CT-ND
Mosfet Array 2 P-Channel (Dual) 20V 6A 900mW Surface Mount 8-SOIC

Mosfet Array 2 P-Channel (Dual) 20V 6A 900mW Surface Mount 8-SOIC

Buy Now Datasheet
FET, MOSFET Arrays - FDS6875DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDS6875DKR-ND
FET, MOSFET Arrays FDS6875DKR-ND
Mosfet Array 2 P-Channel (Dual) 20V 6A 900mW Surface Mount 8-SOIC

Mosfet Array 2 P-Channel (Dual) 20V 6A 900mW Surface Mount 8-SOIC

Buy Now Datasheet
FET, MOSFET Arrays - FDS6875TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDS6875TR-ND
FET, MOSFET Arrays FDS6875TR-ND
Mosfet Array 2 P-Channel (Dual) 20V 6A 900mW Surface Mount 8-SOIC

Mosfet Array 2 P-Channel (Dual) 20V 6A 900mW Surface Mount 8-SOIC

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET
FDS6875
MOSFET FDS6875
MOSFET SO-8 DUAL P-CH -20V

MOSFET SO-8 DUAL P-CH -20V

Buy Now Datasheet
Dual P Channel Mosfet, -20V, Soic, Full Reel; Transistor Polarity Onsemi - 66K6764 - Newark, An Avnet Company
Chicago, IL, United States
Dual P Channel Mosfet, -20V, Soic, Full Reel; Transistor Polarity Onsemi
66K6764
Dual P Channel Mosfet, -20V, Soic, Full Reel; Transistor Polarity Onsemi 66K6764
DUAL P CHANNEL MOSFET, -20V, SOIC, FULL REEL; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6A; On Resistance Rds(on):0.024ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes

DUAL P CHANNEL MOSFET, -20V, SOIC, FULL REEL; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6A; On Resistance Rds(on):0.024ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS6875 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDS6875
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDS6875
MOSFET 2P-CH 20V 6A 8SOIC

MOSFET 2P-CH 20V 6A 8SOIC

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 016171-FDS6875 FDS6875 FDS6875CT-ND FDS6875 66K6764 FDS6875
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6875 FET, MOSFET Arrays FET, MOSFET Arrays MOSFET Dual P Channel Mosfet, -20V, Soic, Full Reel; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; 2 P-Channel (Dual) P-Channel
V(BR)DSS 20 volts 20 volts
PD 900 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; 8-SO 8-SOIC (0.154", 3.90mm Width) "8-SOIC (0.154"", 3.90mm Width)" TO-3
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