onsemi FET, MOSFET Arrays FDS6875

Description
MOSFET 2P-CH 20V 6A 8SOIC
Request a Quote Datasheet
Description
MOSFET 2P-CH 20V 6A 8SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - FDS6875 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
FDS6875
FET, MOSFET Arrays FDS6875
MOSFET 2P-CH 20V 6A 8SOIC

MOSFET 2P-CH 20V 6A 8SOIC

Supplier's Site Datasheet
FET, MOSFET Arrays - FDS6875CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDS6875CT-ND
FET, MOSFET Arrays FDS6875CT-ND
Mosfet Array 2 P-Channel (Dual) 20V 6A 900mW Surface Mount 8-SOIC

Mosfet Array 2 P-Channel (Dual) 20V 6A 900mW Surface Mount 8-SOIC

Buy Now Datasheet
FET, MOSFET Arrays - FDS6875DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDS6875DKR-ND
FET, MOSFET Arrays FDS6875DKR-ND
Mosfet Array 2 P-Channel (Dual) 20V 6A 900mW Surface Mount 8-SOIC

Mosfet Array 2 P-Channel (Dual) 20V 6A 900mW Surface Mount 8-SOIC

Buy Now Datasheet
FET, MOSFET Arrays - FDS6875TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDS6875TR-ND
FET, MOSFET Arrays FDS6875TR-ND
Mosfet Array 2 P-Channel (Dual) 20V 6A 900mW Surface Mount 8-SOIC

Mosfet Array 2 P-Channel (Dual) 20V 6A 900mW Surface Mount 8-SOIC

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6875 - 016171-FDS6875 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6875
016171-FDS6875
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6875 016171-FDS6875
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016171-FDS6875 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Family Name: FDS6875 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 900mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 6A Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 31nC @ 5V Max Input Capacitance: 2250pF @ 10V Maximum Rds On at Id,Vgs: 30 mOhm @ 6A, 4.5V Alternative Parts (Cross-Reference): BSO204PNTMA1; HAT1054R-EL-E; TSM9933DCS RL; Introduction Date: December 10, 1998 ECCN: EAR99 Country of Origin: China, Taiwan Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016171-FDS6875
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: FDS6875
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 6A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 31nC @ 5V
Max Input Capacitance: 2250pF @ 10V
Maximum Rds On at Id,Vgs: 30 mOhm @ 6A, 4.5V
Alternative Parts (Cross-Reference): BSO204PNTMA1; HAT1054R-EL-E; TSM9933DCS RL;
Introduction Date: December 10, 1998
ECCN: EAR99
Country of Origin: China, Taiwan
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS6875 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDS6875
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDS6875
MOSFET 2P-CH 20V 6A 8SOIC

MOSFET 2P-CH 20V 6A 8SOIC

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FDS6875
MOSFET FDS6875
MOSFET SO-8 DUAL P-CH -20V

MOSFET SO-8 DUAL P-CH -20V

Buy Now Datasheet
Dual P Channel Mosfet, -20V, Soic, Full Reel; Transistor Polarity Onsemi - 66K6764 - Newark, An Avnet Company
Chicago, IL, United States
Dual P Channel Mosfet, -20V, Soic, Full Reel; Transistor Polarity Onsemi
66K6764
Dual P Channel Mosfet, -20V, Soic, Full Reel; Transistor Polarity Onsemi 66K6764
DUAL P CHANNEL MOSFET, -20V, SOIC, FULL REEL; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6A; On Resistance Rds(on):0.024ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes

DUAL P CHANNEL MOSFET, -20V, SOIC, FULL REEL; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6A; On Resistance Rds(on):0.024ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDS6875 FDS6875CT-ND 016171-FDS6875 FDS6875 FDS6875 66K6764
Product Name FET, MOSFET Arrays FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6875 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Dual P Channel Mosfet, -20V, Soic, Full Reel; Transistor Polarity Onsemi
Polarity P-Channel; 2 P-Channel (Dual) P-Channel P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 20 volts 20 volts
IDSS 6000 milliamps 6000 milliamps
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Unlock Full Specs
to access all available technical data