onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6699S FDS6699S

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016170-FDS6699S Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 21A (Ta) Gate-Source Threshold Voltage: 3V @ 1mA Max Gate Charge: 91nC @ 10V Max Input Capacitance: 3610pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.6 mOhm @ 21A, 10V Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance Quantity per package: 2,500
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016170-FDS6699S Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 21A (Ta) Gate-Source Threshold Voltage: 3V @ 1mA Max Gate Charge: 91nC @ 10V Max Input Capacitance: 3610pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.6 mOhm @ 21A, 10V Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance Quantity per package: 2,500
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6699S - 016170-FDS6699S - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6699S
016170-FDS6699S
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6699S 016170-FDS6699S
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016170-FDS6699S Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 21A (Ta) Gate-Source Threshold Voltage: 3V @ 1mA Max Gate Charge: 91nC @ 10V Max Input Capacitance: 3610pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.6 mOhm @ 21A, 10V Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016170-FDS6699S
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 21A (Ta)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Gate Charge: 91nC @ 10V
Max Input Capacitance: 3610pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.6 mOhm @ 21A, 10V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500

Buy Now Datasheet
Single FETs, MOSFETs - FDS6699STR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDS6699STR-ND
Single FETs, MOSFETs FDS6699STR-ND
N-Channel 30V 21A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

N-Channel 30V 21A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - FDS6699S - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDS6699S
Single FETs, MOSFETs FDS6699S
MOSFET N-CH 30V 21A 8SOIC

MOSFET N-CH 30V 21A 8SOIC

Supplier's Site Datasheet
Singapore
N-Channel SMD 30V 21A MOSFET Transistor
278-FDS6699S
N-Channel SMD 30V 21A MOSFET Transistor 278-FDS6699S
N-Channel JFET, 30V, 21A, 3.6mR, SOIC, Surface Mount Product overview: FDS6699S from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 30V, 21A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, 21A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDS6699S can be used for catalog matching and distributor lookup.

N-Channel JFET, 30V, 21A, 3.6mR, SOIC, Surface Mount Product overview: FDS6699S from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 30V, 21A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, 21A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDS6699S can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS6699S - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDS6699S
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDS6699S
MOSFET N-CH 30V 21A 8SOIC

MOSFET N-CH 30V 21A 8SOIC

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FDS6699S
MOSFET FDS6699S
MOSFET 30V N-Ch PowerTrench SyncFET

MOSFET 30V N-Ch PowerTrench SyncFET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 016170-FDS6699S FDS6699STR-ND FDS6699S 278-FDS6699S FDS6699S FDS6699S
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6699S Single FETs, MOSFETs Single FETs, MOSFETs N-Channel SMD 30V 21A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts 30 volts
PD 2500 milliwatts 2500 milliwatts 1000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 C (-67 F)
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