Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016168-FDS6690AS
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 10A (Ta)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Gate Charge: 23nC @ 10V
Max Input Capacitance: 910pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 12 mOhm @ 10A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Sufficient
Quantity per package: 2,500
N-Channel 30V 10A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
30V N-CH JFET SOIC 10A 12mR SyncFET Product overview: FDS6690AS from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 10A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 10A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDS6690AS can be used for catalog matching and distributor lookup.
MOSFET, N CHANNEL, 30V, 0.01OHM, 10A, SOIC-8; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:10A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.6V RoHS Compliant: Yes
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MOSFET N-CH 30V 10A 8SOIC
MOSFET 30V NCH POWER TRENCH SYNCFET
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 10A I(D), 30V, 0.012OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOIC-8. FREE 2 YEAR RADWELL WARRANTY
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Karl Kruse GmbH & Co. KG | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Radwell International | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 016168-FDS6690AS | FDS6690ASTR-ND | 278-FDS6690AS | 84W8869 | FDS6690AS | FDS6690AS | FDS6690AS | 66739246 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6690AS | Single FETs, MOSFETs | 30V 10A SOIC MOSFET Transistor | Mosfet, N Channel, 30V, 0.01Ohm, 10A, Soic-8; Channel Type Onsemi | TRANS MOSFET N-CH 30V 10A 8-PIN SOIC | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Transistor |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||||
| V(BR)DSS | 30 volts | |||||||
| PD | 2500 milliwatts | 2500 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) |
