Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067094-FDS6690A
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Family Name: FDS6690A
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 11A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 16nC @ 5V
Max Input Capacitance: 1205pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 12.5 mOhm @ 11A, 10V
Alternative Parts (Cross-Reference): IRF7466TRPBF; IRF7466; IRF7466PbF;
Introduction Date: May 20, 1999
ECCN: EAR99
Country of Origin: China, Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Sufficient
Quantity per package: 2,500
MOSFET N-CH 30V 11A 8SOIC
N-Channel 30V 11A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
N-Channel 30V 11A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
N-Channel 30V 11A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
MOSFETs SO-8 SGL N-CH 30V Product overview: FDS6690A from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDS6690A can be used for catalog matching and distributor lookup.
SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 11A I(D), 30V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SO-8. FREE 2 YEAR RADWELL WARRANTY
N CHANNEL MOSFET, 30V, 11A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.9V RoHS Compliant: Yes
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0125ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.9V; Power Dissipation Pd:2.5W; RoHS Compliant: Yes
MOSFET, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.9V; Power Dissipation:2.5W RoHS Compliant: Yes
MOSFET N-CH 30V 11A 8SOIC
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | VAST STOCK CO., LIMITED | Radwell International | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 067094-FDS6690A | FDS6690A | FDS6690ATR-ND | 2088-FDS6690A | 6710624 | 6710624P | FDS6690A | 16130504 | 58K8855 | 96K9886 | 67R2077 | FDS6690A |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6690A | Single FETs, MOSFETs | Single FETs, MOSFETs | 30V MOSFET Transistor | MOSFETs | MOSFETs | MOSFET | Transistor | N Channel Mosfet, 30V, 11A, Soic; Channel Type Onsemi | Mosfet, N, So-8; Transistor Polarity Onsemi | Mosfet, Full Reel; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | |||||
| V(BR)DSS | 30 volts | 30 volts | ||||||||||
| PD | 2500 milliwatts | 2500 milliwatts | 2.5 milliwatts | 2500 milliwatts | 2500 milliwatts | |||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||||||
| Package Type | SOT3; 8-SO | 8-SOIC (0.154", 3.90mm Width) | "8-SOIC (0.154"", 3.90mm Width)" | Reel | Soic | SOIC | TO-3 | TO-3; SO-8 | TO-3 | Surface Mount |
