onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6688S FDS6688S

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067092-FDS6688S Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 16A (Ta) Gate-Source Threshold Voltage: 3V @ 1mA Max Gate Charge: 78nC @ 10V Max Input Capacitance: 3290pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6 mOhm @ 16A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067092-FDS6688S Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 16A (Ta) Gate-Source Threshold Voltage: 3V @ 1mA Max Gate Charge: 78nC @ 10V Max Input Capacitance: 3290pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6 mOhm @ 16A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6688S - 067092-FDS6688S - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6688S
067092-FDS6688S
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6688S 067092-FDS6688S
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067092-FDS6688S Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 16A (Ta) Gate-Source Threshold Voltage: 3V @ 1mA Max Gate Charge: 78nC @ 10V Max Input Capacitance: 3290pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6 mOhm @ 16A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067092-FDS6688S
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 16A (Ta)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Gate Charge: 78nC @ 10V
Max Input Capacitance: 3290pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6 mOhm @ 16A, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - FDS6688S-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDS6688S-ND
Single FETs, MOSFETs FDS6688S-ND
N-Channel 30V 16A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

N-Channel 30V 16A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number 067092-FDS6688S FDS6688S-ND
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6688S Single FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts
PD 2500 milliwatts
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