Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016166-FDS6681Z
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta)
Family Name: FDS6681
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 20A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 260nC @ 10V
Max Input Capacitance: 7540pF @ 15V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 4.6 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): RS3E180ATTB1; TPCA8128,LQ(M; TPCA8128,LQ(CM;
Introduction Date: June 29, 2005
ECCN: EAR99
Country of Origin: China, Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management, Consumer Electronics
Quantity per package: 2,500
MOSFET P-CH 30V 20A 8SOIC
P-Channel 30V 20A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
P-Channel 30V 20A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
P-Channel 30V 20A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
MOSFET P-CH 30V 20A 8SOIC
MOSFET Transistor, P Channel, 20 A, -30 V, 0.0038 ohm, -10 V, 1.8 V RoHS Compliant: Yes
P CHANNEL MOSFET, -30V, 20A, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:20A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.8V RoHS Compliant: Yes
MOSFET, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:20A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.8V; Power Dissipation:2.5W RoHS Compliant: Yes
MOSFET 30V P-Channel PowerTrench MOSFET
30V 20A 4.6mΩ@20A,10V 2.5W 3V@250uA P Channel SO-8 MOSFETs ROHS
| Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 016166-FDS6681Z | 6710618 | 6710618P | FDS6681Z | FDS6681ZCT-ND | FDS6681Z | 55R1448 | 86K1388 | 67R2076 | FDS6681Z | FDS6681Z |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6681Z | MOSFETs | MOSFETs | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Transistor, P Channel, 20 A, -30 V, 0.0038 Ohm, -10 V, 1.8 V Rohs Compliant Onsemi | P Channel Mosfet, -30V, 20A, Soic; Channel Type Onsemi | Mosfet, Full Reel; Channel Type Onsemi | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | |||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | ||||||||
| PD | 2500 milliwatts | 2500 milliwatts | 2500 milliwatts | 2500 milliwatts | |||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||||
| Package Type | SOT3; 8-SO | Soic | SOIC | 8-SOIC (0.154", 3.90mm Width) | "8-SOIC (0.154"", 3.90mm Width)" | 8-SOIC (0.154, 3.90mm Width) | TO-3 | TO-3 | TO-3 | SO-8 |
