N-Ch JFET 30V 11.5A 10mΩ SOIC Surface Mount Product overview: FDS6680AS from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 30V, 11.5A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, 11.5A, SOIC, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDS6680AS can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016165-FDS6680AS
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 11.5A (Ta)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 1240pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10 mOhm @ 11.5A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Industrial
Quantity per package: 2,500
N-Channel 30V 11.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
MOSFET 30V N-Channel PowerTrench SyncFET
(PRICE/TC),MOSFET, N, SMD, SO-8, TRANSISTOR POLARITY:N CHANNEL, DRAIN SOURCE VOLTAGE VDS:30V, CONTINUOUS DRAIN CURRENT ID:11.5A, ON RESISTANCE RDS(ON):0.01OHM, TRANSISTOR MOUNTING:SURFACE MOUNT, RDS(ON) TEST VOLTAGE VGS:10V, NO. OF PINS:8PINS ROHS COMPLIA. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 30V 11.5A 8SOIC
MOSFET, N, SMD, SO-8; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.5V; No. of Pins:8Pins RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Radwell International | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-FDS6680AS | 016165-FDS6680AS | FDS6680ASTR-ND | FDS6680AS | 38463150 | FDS6680AS | 61M6315 |
| Product Name | SMD 30V 11.5A SOIC MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6680AS | Single FETs, MOSFETs | MOSFET | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N, Smd, So-8; Channel Type Onsemi |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| PD | 1000 milliwatts | 2500 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | |||||
| V(BR)DSS | 30 volts |
