MOSFET P-CH 30V 13A 8SOIC
MOSFETs -30V P-Channel PowerTrench MOSFET Product overview: FDS6679AZ from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -30V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDS6679AZ can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016163-FDS6679AZ
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta)
Family Name: FDS6679AZ
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 13A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 96nC @ 10V
Max Input Capacitance: 3845pF @ 15V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 9.3 mOhm @ 13A, 10V
Alternative Parts (Cross-Reference): BSO130P03SHXT; BSO130P03SNT; RRS100P03FRATB; BSO130P03S H;
Introduction Date: April 20, 2001
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Industrial
Quantity per package: 2,500
P-Channel 30V 13A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
P-Channel 30V 13A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
P-Channel 30V 13A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
MOSFET -30V P-Channel PowerTrench MOSFET
P CHANNEL POWERTRENCH MOSFET, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:13A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.9V RoHS Compliant: Yes
MOSFET Transistor, P Channel, -13 A, -30 V, 0.0077 ohm, -10 V, -1.9 V RoHS Compliant: Yes
P CHANNEL MOSFET, -30V, 13A, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:13A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.9V RoHS Compliant: Yes
MOSFET P-CH 30V 13A 8SOIC
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDS6679AZ | 2088-FDS6679AZ | 6710602 | 6710602P | 016163-FDS6679AZ | FDS6679AZCT-ND | FDS6679AZ | 86K1387 | 47T5046 | FDS6679AZ |
| Product Name | Single FETs, MOSFETs | P-Channel -30V MOSFET Transistor | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6679AZ | Single FETs, MOSFETs | MOSFET | P Channel Powertrench Mosfet, Full Reel; Channel Type Onsemi | Mosfet Transistor, P Channel, -13 A, -30 V, 0.0077 Ohm, -10 V, -1.9 V Rohs Compliant Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||||
| V(BR)DSS | 30 volts | 30 volts | ||||||||
| IDSS | 13000 milliamps | 13000 milliamps | ||||||||
| PD | 2500 milliwatts | 2.5 milliwatts | 2500 milliwatts |
