onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6676AS FDS6676AS

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016162-FDS6676AS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Family Name: FDS6676AS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 14.5A (Ta) Gate-Source Threshold Voltage: 3V @ 1mA Max Gate Charge: 63nC @ 10V Max Input Capacitance: 2510pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6 mOhm @ 14.5A, 10V Alternative Parts (Cross-Reference): AO4304; AP9412AGM-HF; DMN3007LSSQ-13; UPA2701GR-E2; Introduction Date: December 10, 2004 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Sufficient Quantity per package: 2,500
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016162-FDS6676AS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Family Name: FDS6676AS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 14.5A (Ta) Gate-Source Threshold Voltage: 3V @ 1mA Max Gate Charge: 63nC @ 10V Max Input Capacitance: 2510pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6 mOhm @ 14.5A, 10V Alternative Parts (Cross-Reference): AO4304; AP9412AGM-HF; DMN3007LSSQ-13; UPA2701GR-E2; Introduction Date: December 10, 2004 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Sufficient Quantity per package: 2,500
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6676AS - 016162-FDS6676AS - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6676AS
016162-FDS6676AS
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6676AS 016162-FDS6676AS
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016162-FDS6676AS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Family Name: FDS6676AS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 14.5A (Ta) Gate-Source Threshold Voltage: 3V @ 1mA Max Gate Charge: 63nC @ 10V Max Input Capacitance: 2510pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6 mOhm @ 14.5A, 10V Alternative Parts (Cross-Reference): AO4304; AP9412AGM-HF; DMN3007LSSQ-13; UPA2701GR-E2; Introduction Date: December 10, 2004 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Sufficient Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016162-FDS6676AS
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Family Name: FDS6676AS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 14.5A (Ta)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Gate Charge: 63nC @ 10V
Max Input Capacitance: 2510pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6 mOhm @ 14.5A, 10V
Alternative Parts (Cross-Reference): AO4304; AP9412AGM-HF; DMN3007LSSQ-13; UPA2701GR-E2;
Introduction Date: December 10, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Sufficient
Quantity per package: 2,500

Buy Now Datasheet
MOSFET Transistor 278-FDS6676AS
SMALL SIGNAL FIELD-EFFECT TRANSI Product overview: FDS6676AS from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDS6676AS can be used for catalog matching and distributor lookup.

SMALL SIGNAL FIELD-EFFECT TRANSI Product overview: FDS6676AS from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDS6676AS can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - FDS6676ASTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDS6676ASTR-ND
Single FETs, MOSFETs FDS6676ASTR-ND
N-Channel 30V 14.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

N-Channel 30V 14.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS6676AS - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDS6676AS
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDS6676AS
MOSFET N-CH 30V 14.5A 8SOIC

MOSFET N-CH 30V 14.5A 8SOIC

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 30V NCH POWER TRENCH MOSFET

MOSFET 30V NCH POWER TRENCH MOSFET

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Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 016162-FDS6676AS 278-FDS6676AS FDS6676ASTR-ND FDS6676AS FDS6676AS
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6676AS MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts
PD 2500 milliwatts 2500 milliwatts
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