onsemi Mosfet, P, So-8; Channel Type Onsemi FDS6675.

Description
MOSFET, P, SO-8; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V; Power Dissipation:2.5W RoHS Compliant: Yes
Datasheet
Description
MOSFET, P, SO-8; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V; Power Dissipation:2.5W RoHS Compliant: Yes
Datasheet

Suppliers

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Product
Description
Supplier Links
Mosfet, P, So-8; Channel Type Onsemi - 96K9883 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P, So-8; Channel Type Onsemi
96K9883
Mosfet, P, So-8; Channel Type Onsemi 96K9883
MOSFET, P, SO-8; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V; Power Dissipation:2.5W RoHS Compliant: Yes

MOSFET, P, SO-8; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V; Power Dissipation:2.5W RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 96K9883
Product Name Mosfet, P, So-8; Channel Type Onsemi
IDSS 11000 milliamps
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