MOSFET, P, SO-8; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V; Power Dissipation:2.5W RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 96K9883 |
| Product Name | Mosfet, P, So-8; Channel Type Onsemi |
| IDSS | 11000 milliamps |