onsemi Mosfet, P, So-8; Channel Type Onsemi FDS6675.

The FDS6675 is a P-channel logic level MOSFET in an SO-8 package, designed for load switching and power management in portable electronics. It has a drain-source voltage rating of -30 V and a continuous drain current of -11 A. The on-state resistance is 0.014 Ω at -10 V gate-source voltage and 0.020 Ω at -4.5 V. The device has a total gate charge of 30 nC and a power dissipation capability of 2.5 W. Thermal resistance is 50 °C/W junction-to-ambient on a 0.5 in² pad. The operating and storage temperature range is -55 °C to 150 °C. The package complies with RoHS standards.