onsemi Single FETs, MOSFETs FDS6675

Description
P-Channel 30V 11A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
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Description
P-Channel 30V 11A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDS6675TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDS6675TR-ND
Single FETs, MOSFETs FDS6675TR-ND
P-Channel 30V 11A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

P-Channel 30V 11A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6675 - 067086-FDS6675 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6675
067086-FDS6675
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6675 067086-FDS6675
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067086-FDS6675 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 11A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 62nC @ 10V Max Input Capacitance: 2470pF @ 15V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 13 mOhm @ 11A, 10V Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Portable Devices, Computers & Computer Peripherals Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067086-FDS6675
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 11A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 62nC @ 10V
Max Input Capacitance: 2470pF @ 15V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 13 mOhm @ 11A, 10V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Portable Devices, Computers & Computer Peripherals
Quantity per package: 2,500

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS6675 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDS6675
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDS6675
MOSFET P-CH 30V 11A 8SOIC

MOSFET P-CH 30V 11A 8SOIC

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FDS6675
MOSFET FDS6675
MOSFET SO-8 P-CH -30V

MOSFET SO-8 P-CH -30V

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDS6675TR-ND 067086-FDS6675 FDS6675 FDS6675
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6675 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel P-Channel; P-Channel
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3; 8-SO 8-SOIC (0.154, 3.90mm Width)
V(BR)DSS 30 volts
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