Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016160-FDS6673BZ
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 14.5A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 124nC @ 10V
Max Input Capacitance: 4700pF @ 15V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 7.8 mOhm @ 14.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500
P-Channel 30V 14.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
P-Channel 30V 14.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
P-Channel 30V 14.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
MOSFET P-CH 30V 14.5A 8SOIC
MOSFETs -30V P-Channel PowerTrench MOSFET Product overview: FDS6673BZ from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -30V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDS6673BZ can be used for catalog matching and distributor lookup.
MOSFET -30V P-Channel PowerTrench MOSFET
P CHANNEL MOSFET, -30V, 14.5mA, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:14.5mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.9V RoHS Compliant: Yes
P CHANNEL MOSFET, -30V, 14.5mA; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:14.5mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.9V RoHS Compliant: Yes
MOSFET P-CH 30V 14.5A 8SOIC
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 016160-FDS6673BZ | FDS6673BZTR-ND | FDS6673BZ | 2088-FDS6673BZ | FDS6673BZ | 86K1385 | FDS6673BZ |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6673BZ | Single FETs, MOSFETs | Single FETs, MOSFETs | P-Channel -30V MOSFET Transistor | MOSFET | P Channel Mosfet, -30V, 14.5Ma, Full Reel; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | ||
| V(BR)DSS | 30 volts | 30 volts | |||||
| PD | 2500 milliwatts | 2500 milliwatts | 2.5 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SOT3; 8-SO | "8-SOIC (0.154"", 3.90mm Width)" | 8-SOIC (0.154", 3.90mm Width) | Reel | TO-3 | 8-SOIC (0.154, 3.90mm Width) |
