onsemi Single FETs, MOSFETs FDS6670AS

Description
N-Channel 30V 13.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
  • Single FETs, MOSFETs - FDS6670ASFSTR-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6670AS - 016159-FDS6670AS - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS6670AS - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 30V, 13.5A, Soic-8; Transistor Polarity Onsemi - 46AC0810 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
N-Channel 30V 13.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDS6670ASFSTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDS6670ASFSTR-ND
Single FETs, MOSFETs FDS6670ASFSTR-ND
N-Channel 30V 13.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

N-Channel 30V 13.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6670AS - 016159-FDS6670AS - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6670AS
016159-FDS6670AS
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6670AS 016159-FDS6670AS
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016159-FDS6670AS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 13.5A (Ta) Gate-Source Threshold Voltage: 3V @ 1mA Max Gate Charge: 38nC @ 10V Max Input Capacitance: 1540pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9 mOhm @ 13.5A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Industrial Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016159-FDS6670AS
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 13.5A (Ta)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 1540pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9 mOhm @ 13.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Industrial
Quantity per package: 2,500

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS6670AS - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDS6670AS
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDS6670AS
MOSFET N-CH 30V 13.5A 8SOIC

MOSFET N-CH 30V 13.5A 8SOIC

Supplier's Site
Mosfet, N-Ch, 30V, 13.5A, Soic-8; Transistor Polarity Onsemi - 46AC0810 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 30V, 13.5A, Soic-8; Transistor Polarity Onsemi
46AC0810
Mosfet, N-Ch, 30V, 13.5A, Soic-8; Transistor Polarity Onsemi 46AC0810
MOSFET, N-CH, 30V, 13.5A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:13.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0075ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power RoHS Compliant: Yes

MOSFET, N-CH, 30V, 13.5A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:13.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0075ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDS6670AS
MOSFET FDS6670AS
MOSFET 30V N-CH POWER TRENCH SYNCFET

MOSFET 30V N-CH POWER TRENCH SYNCFET

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDS6670ASFSTR-ND 016159-FDS6670AS FDS6670AS 46AC0810 FDS6670AS
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6670AS Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 30V, 13.5A, Soic-8; Transistor Polarity Onsemi MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3; 8-SO 8-SOIC (0.154, 3.90mm Width) TO-3
V(BR)DSS 30 volts
PD 2500 milliwatts
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