N-Channel 30V 13A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
N-Channel 30V 13A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
N-Channel 30V 13A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016158-FDS6670A
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 13.5A (Ta)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 1540pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9 mOhm @ 13.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Industrial
Quantity per package: 2,500
MOSFET N-CH 30V 13A 8SOIC
MOSFET N-CH 30V 13A 8SOIC
N CHANNEL MOSFET, 30V, 13A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:13A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.8V RoHS Compliant: Yes
MOSFET, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:13A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.8V; Power Dissipation:2.5W RoHS Compliant: Yes
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDS6670ACT-ND | 016158-FDS6670A | FDS6670A | 6710582 | 6710582P | FDS6670A | 78K5940 | 58P0618 | FDS6670A |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6670A | Single FETs, MOSFETs | MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 30V, 13A, Soic; Channel Type Onsemi | Mosfet, Full Reel; Channel Type Onsemi | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SOT3; 8-SO | 8-SOIC (0.154", 3.90mm Width) | Soic | SOIC | 8-SOIC (0.154, 3.90mm Width) | TO-3 | TO-3 | |
| V(BR)DSS | 30 volts | 30 volts | |||||||
| PD | 2500 milliwatts | 2500 milliwatts | 2500 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
