MOSFET N-CH 30V 13A 8SOIC
SMALL SIGNAL FIELD-EFFECT TRANSI Product overview: FDS6670A from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDS6670A can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016158-FDS6670A
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 13.5A (Ta)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 1540pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9 mOhm @ 13.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Industrial
Quantity per package: 2,500
N-Channel 30V 13A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
N-Channel 30V 13A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
N-Channel 30V 13A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
N CHANNEL MOSFET, 30V, 13A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:13A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.8V RoHS Compliant: Yes
MOSFET, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:13A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.8V; Power Dissipation:2.5W RoHS Compliant: Yes
MOSFET N-CH 30V 13A 8SOIC
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | RS Components, Ltd. | RS Components, Ltd. | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDS6670A | 278-FDS6670A | 016158-FDS6670A | FDS6670ACT-ND | 6710582 | 6710582P | 78K5940 | 58P0618 | FDS6670A | FDS6670A |
| Product Name | Single FETs, MOSFETs | MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6670A | Single FETs, MOSFETs | MOSFETs | MOSFETs | N Channel Mosfet, 30V, 13A, Soic; Channel Type Onsemi | Mosfet, Full Reel; Channel Type Onsemi | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||||
| V(BR)DSS | 30 volts | 30 volts | ||||||||
| IDSS | 13000 milliamps | 13000 milliamps | 13000 milliamps | |||||||
| PD | 2500 milliwatts | 2.5 milliwatts | 2500 milliwatts | 2500 milliwatts |
