onsemi Single FETs, MOSFETs FDS6614A

Description
N-Channel 30V 9.3A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Request a Quote Datasheet
Description
N-Channel 30V 9.3A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDS6614A-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDS6614A-ND
Single FETs, MOSFETs FDS6614A-ND
N-Channel 30V 9.3A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

N-Channel 30V 9.3A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6614A - 067083-FDS6614A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6614A
067083-FDS6614A
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6614A 067083-FDS6614A
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067083-FDS6614A Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 9.3A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 17nC @ 5V Max Input Capacitance: 1160pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 18 mOhm @ 9.3A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067083-FDS6614A
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 9.3A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 17nC @ 5V
Max Input Capacitance: 1160pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 18 mOhm @ 9.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS6614A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDS6614A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDS6614A
MOSFET N-CH 30V 9.3A 8SOIC

MOSFET N-CH 30V 9.3A 8SOIC

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDS6614A-ND 067083-FDS6614A FDS6614A
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6614A Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3; 8-SO 8-SOIC (0.154, 3.90mm Width)
V(BR)DSS 30 volts
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