MOSFET P-CH 20V 11A 8SOIC
P-Channel 20V 11A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
P-Channel 20V 11A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
MOSFET P-Ch 20V 11A 2.5V-Spec. SOIC8
MOSFET P-Ch 20V 11A 2.5V-Spec. SOIC8
MOSFET P-Ch 20V 11A 2.5V-Spec. SOIC8
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016156-FDS6576
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 11A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 60nC @ 4.5V
Max Input Capacitance: 4044pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 14 mOhm @ 11A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500
P CHANNEL MOSFET, -20V, 11A, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:11A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:830mV RoHS Compliant: Yes
MOSFET P-CH 20V 11A 8SOIC
| ODG (Origin Data Global) | DigiKey | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDS6576 | FDS6576TR-ND | 9175487P | 9175487 | 016156-FDS6576 | 34C0170 | FDS6576 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6576 | P Channel Mosfet, -20V, 11A, Soic; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 20 volts | 20 volts | |||||
| IDSS | 11000 milliamps | 11000 milliamps | |||||
| PD | 2500 milliwatts | 2500 milliwatts |
