onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6572A FDS6572A

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067081-FDS6572A Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 16A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 80nC @ 4.5V Max Input Capacitance: 5914pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 6 mOhm @ 16A, 4.5V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Industrial
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067081-FDS6572A Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 16A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 80nC @ 4.5V Max Input Capacitance: 5914pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 6 mOhm @ 16A, 4.5V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Industrial
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6572A - 067081-FDS6572A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6572A
067081-FDS6572A
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6572A 067081-FDS6572A
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067081-FDS6572A Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 16A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 80nC @ 4.5V Max Input Capacitance: 5914pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 6 mOhm @ 16A, 4.5V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Industrial

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067081-FDS6572A
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 16A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 80nC @ 4.5V
Max Input Capacitance: 5914pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 6 mOhm @ 16A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Industrial

Buy Now Datasheet
Single FETs, MOSFETs - FDS6572A-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDS6572A-ND
Single FETs, MOSFETs FDS6572A-ND
N-Channel 20V 16A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

N-Channel 20V 16A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS6572A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDS6572A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDS6572A
MOSFET N-CH 20V 16A 8SOIC

MOSFET N-CH 20V 16A 8SOIC

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 067081-FDS6572A FDS6572A-ND FDS6572A
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6572A Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 20 volts
PD 2500 milliwatts
Unlock Full Specs
to access all available technical data