Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 139406-FDS6570A
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 15A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 66nC @ 5V
Max Input Capacitance: 4700pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 7.5 mOhm @ 15A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Limited
Quantity per package: 2,500
N-Channel 20V 15A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
MOSFETs SO-8 N-CH 20V Product overview: FDS6570A from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDS6570A can be used for catalog matching and distributor lookup.
(PRICE/TC),MOSFET, N-CH, 20V, 15A, SOIC, TRANSISTOR POLARITY:N CHANNEL, CONTINUOUS DRAIN CURRENT ID:15A, DRAIN SOURCE VOLTAGE VDS:20V, ON RESISTANCE RDS(ON):0.0075OHM, RDS(ON) TEST VOLTAGE VGS:4.5V, THRESHOLD VOLTAGE VGS:900MV, POWER ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:15A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:900mV; Power Dissipation:2.5W RoHS Compliant: Yes
MOSFET, N-CH, 20V, 15A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.0075ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:900mV; Power RoHS Compliant: Yes
MOSFET N-CH 20V 15A 8SOIC
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Radwell International | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 139406-FDS6570A | FDS6570ATR-ND | 2088-FDS6570A | 16130444 | 67R2074 | 07AH3945 | FDS6570A | FDS6570A |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6570A | Single FETs, MOSFETs | 20V MOSFET Transistor | Transistor | Mosfet, Full Reel; Channel Type Onsemi | Mosfet, N-Ch, 20V, 15A, Soic; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |||||
| V(BR)DSS | 20 volts | |||||||
| PD | 2500 milliwatts | 2.5 milliwatts | 2500 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | |||||||
| Package Type | SOT3; 8-SO | "8-SOIC (0.154"", 3.90mm Width)" | Reel | TO-3 | TO-3 | 8-SOIC (0.154, 3.90mm Width) |
