onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6375 FDS6375

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016153-FDS6375 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.5W (Ta) Family Name: FDS6375 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 8A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 36nC @ 4.5V Max Input Capacitance: 2694pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 24 mOhm @ 8A, 4.5V Alternative Parts (Cross-Reference): TSM160P02CS RLG; STS9P2UH7; FDS6375_NF40; Introduction Date: March 17, 1999 ECCN: EAR99 Country of Origin: China, Philippines Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Industrial Quantity per package: 2,500
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016153-FDS6375 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.5W (Ta) Family Name: FDS6375 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 8A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 36nC @ 4.5V Max Input Capacitance: 2694pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 24 mOhm @ 8A, 4.5V Alternative Parts (Cross-Reference): TSM160P02CS RLG; STS9P2UH7; FDS6375_NF40; Introduction Date: March 17, 1999 ECCN: EAR99 Country of Origin: China, Philippines Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Industrial Quantity per package: 2,500
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Datasheet
Datasheet Summary
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The P-Channel MOSFET, part number 78K5935, is designed for power management applications and features a maximum drain-source voltage of -20V and a continuous drain current rating of -8A. It utilizes advanced PowerTrench technology, which provides low on-resistance values of 24 mOc at a gate-source voltage of -4.5V and 32 mOc at -2.5V. The device has a low gate charge of 26 nC, making it suitable for efficient switching applications. It operates within a temperature range of -55¬8C to +175¬8C and is housed in a SO-8 package, facilitating surface mount applications. The MOSFET is RoHS compliant, ensuring it meets environmental standards. This component is ideal for applications such as load switching and battery protection, where reliable performance and efficiency are critical.

Datasheet Summary
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The P-Channel MOSFET, part number 78K5935, is designed for power management applications and features a maximum drain-source voltage of -20V and a continuous drain current rating of -8A. It utilizes advanced PowerTrench technology, which provides low on-resistance values of 24 mOc at a gate-source voltage of -4.5V and 32 mOc at -2.5V. The device has a low gate charge of 26 nC, making it suitable for efficient switching applications. It operates within a temperature range of -55¬8C to +175¬8C and is housed in a SO-8 package, facilitating surface mount applications. The MOSFET is RoHS compliant, ensuring it meets environmental standards. This component is ideal for applications such as load switching and battery protection, where reliable performance and efficiency are critical.

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Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6375 - 016153-FDS6375 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6375
016153-FDS6375
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6375 016153-FDS6375
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016153-FDS6375 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.5W (Ta) Family Name: FDS6375 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 8A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 36nC @ 4.5V Max Input Capacitance: 2694pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 24 mOhm @ 8A, 4.5V Alternative Parts (Cross-Reference): TSM160P02CS RLG; STS9P2UH7; FDS6375_NF40; Introduction Date: March 17, 1999 ECCN: EAR99 Country of Origin: China, Philippines Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Industrial Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016153-FDS6375
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta)
Family Name: FDS6375
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 8A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 36nC @ 4.5V
Max Input Capacitance: 2694pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 24 mOhm @ 8A, 4.5V
Alternative Parts (Cross-Reference): TSM160P02CS RLG; STS9P2UH7; FDS6375_NF40;
Introduction Date: March 17, 1999
ECCN: EAR99
Country of Origin: China, Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Industrial
Quantity per package: 2,500

Buy Now Datasheet
Single FETs, MOSFETs - FDS6375 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDS6375
Single FETs, MOSFETs FDS6375
MOSFET P-CH 20V 8A 8SOIC

MOSFET P-CH 20V 8A 8SOIC

Supplier's Site Datasheet
MOSFETs - 6710564 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
6710564
MOSFETs 6710564
MOSFET P-Channel 20V 8A SOIC8

MOSFET P-Channel 20V 8A SOIC8

Supplier's Site
MOSFETs - 6710564P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
6710564P
MOSFETs 6710564P
MOSFET P-Channel 20V 8A SOIC8

MOSFET P-Channel 20V 8A SOIC8

Supplier's Site
MOSFETs - 1662604 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1662604
MOSFETs 1662604
MOSFET P-Channel 20V 8A SOIC8

MOSFET P-Channel 20V 8A SOIC8

Supplier's Site
Single FETs, MOSFETs - FDS6375TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDS6375TR-ND
Single FETs, MOSFETs FDS6375TR-ND
P-Channel 20V 8A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

P-Channel 20V 8A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - FDS6375DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDS6375DKR-ND
Single FETs, MOSFETs FDS6375DKR-ND
P-Channel 20V 8A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

P-Channel 20V 8A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - FDS6375CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDS6375CT-ND
Single FETs, MOSFETs FDS6375CT-ND
P-Channel 20V 8A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

P-Channel 20V 8A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
P Channel Mosfet, -20V, 8A, Soic; Channel Type Onsemi - 78K5935 - Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -20V, 8A, Soic; Channel Type Onsemi
78K5935
P Channel Mosfet, -20V, 8A, Soic; Channel Type Onsemi 78K5935
P CHANNEL MOSFET, -20V, 8A, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:700mV RoHS Compliant: Yes

P CHANNEL MOSFET, -20V, 8A, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:700mV RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet Transistor, P Channel, 8 A, 20 V, 24 Mohm, -4.5 V, -700 Mv Rohs Compliant Onsemi - 96K9881 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, P Channel, 8 A, 20 V, 24 Mohm, -4.5 V, -700 Mv Rohs Compliant Onsemi
96K9881
Mosfet Transistor, P Channel, 8 A, 20 V, 24 Mohm, -4.5 V, -700 Mv Rohs Compliant Onsemi 96K9881
MOSFET Transistor, P Channel, 8 A, 20 V, 24 mohm, -4.5 V, -700 mV RoHS Compliant: Yes

MOSFET Transistor, P Channel, 8 A, 20 V, 24 mohm, -4.5 V, -700 mV RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, Full Reel; Channel Type Onsemi - 67R2073 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Full Reel; Channel Type Onsemi
67R2073
Mosfet, Full Reel; Channel Type Onsemi 67R2073
MOSFET, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:700mV; Power Dissipation:2.5W RoHS Compliant: Yes

MOSFET, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:700mV; Power Dissipation:2.5W RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS6375 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDS6375
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDS6375
MOSFET P-CH 20V 8A 8SOIC

MOSFET P-CH 20V 8A 8SOIC

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FDS6375
MOSFET FDS6375
MOSFET SO-8 P-CH -20V

MOSFET SO-8 P-CH -20V

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) RS Components, Ltd. RS Components, Ltd. DigiKey Newark, An Avnet Company Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 016153-FDS6375 FDS6375 6710564 6710564P FDS6375TR-ND 78K5935 96K9881 67R2073 FDS6375 FDS6375
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6375 Single FETs, MOSFETs MOSFETs MOSFETs Single FETs, MOSFETs P Channel Mosfet, -20V, 8A, Soic; Channel Type Onsemi Mosfet Transistor, P Channel, 8 A, 20 V, 24 Mohm, -4.5 V, -700 Mv Rohs Compliant Onsemi Mosfet, Full Reel; Channel Type Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel; P-Channel P-Channel; P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel
V(BR)DSS 20 volts 20 volts
PD 2500 milliwatts 2500 milliwatts 2500 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type SOT3; 8-SO 8-SOIC (0.154", 3.90mm Width) Soic SOIC "8-SOIC (0.154"", 3.90mm Width)" TO-3 TO-3 TO-3 Surface Mount
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