onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6298 FDS6298

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016152-FDS6298 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Ta) Family Name: FDS6298 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 13A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 14nC @ 5V Max Input Capacitance: 1108pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9 mOhm @ 13A, 10V Alternative Parts (Cross-Reference): HAT2198R-E; SI4420DYTRPBF; Si4420DYPbF; IRF7821PbF; Introduction Date: April 20, 2001 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance Quantity per package: 2,500
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6298 - 016152-FDS6298 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FDS6298TR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FDS6298 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Mosfet Transistor, N Channel, 13 A, 30 V, 9 Mohm, 10 V, 1.7 V Rohs Compliant Onsemi - 31Y1399 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS6298 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016152-FDS6298 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Ta) Family Name: FDS6298 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 13A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 14nC @ 5V Max Input Capacitance: 1108pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9 mOhm @ 13A, 10V Alternative Parts (Cross-Reference): HAT2198R-E; SI4420DYTRPBF; Si4420DYPbF; IRF7821PbF; Introduction Date: April 20, 2001 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance Quantity per package: 2,500
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6298 - 016152-FDS6298 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6298
016152-FDS6298
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6298 016152-FDS6298
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016152-FDS6298 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Ta) Family Name: FDS6298 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 13A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 14nC @ 5V Max Input Capacitance: 1108pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9 mOhm @ 13A, 10V Alternative Parts (Cross-Reference): HAT2198R-E; SI4420DYTRPBF; Si4420DYPbF; IRF7821PbF; Introduction Date: April 20, 2001 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016152-FDS6298
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta)
Family Name: FDS6298
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 13A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 14nC @ 5V
Max Input Capacitance: 1108pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9 mOhm @ 13A, 10V
Alternative Parts (Cross-Reference): HAT2198R-E; SI4420DYTRPBF; Si4420DYPbF; IRF7821PbF;
Introduction Date: April 20, 2001
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500

Buy Now Datasheet
Single FETs, MOSFETs - FDS6298TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDS6298TR-ND
Single FETs, MOSFETs FDS6298TR-ND
N-Channel 30V 13A (Ta) 3W (Ta) Surface Mount 8-SOIC

N-Channel 30V 13A (Ta) 3W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - FDS6298 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDS6298
Single FETs, MOSFETs FDS6298
MOSFET N-CH 30V 13A 8SOIC

MOSFET N-CH 30V 13A 8SOIC

Supplier's Site Datasheet
Mosfet Transistor, N Channel, 13 A, 30 V, 9 Mohm, 10 V, 1.7 V Rohs Compliant Onsemi - 31Y1399 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 13 A, 30 V, 9 Mohm, 10 V, 1.7 V Rohs Compliant Onsemi
31Y1399
Mosfet Transistor, N Channel, 13 A, 30 V, 9 Mohm, 10 V, 1.7 V Rohs Compliant Onsemi 31Y1399
MOSFET Transistor, N Channel, 13 A, 30 V, 9 mohm, 10 V, 1.7 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 13 A, 30 V, 9 mohm, 10 V, 1.7 V RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDS6298
MOSFET FDS6298
MOSFET 30V N-CH Fast SwitCH PwrTrenCH MOSFET

MOSFET 30V N-CH Fast SwitCH PwrTrenCH MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS6298 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDS6298
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDS6298
MOSFET N-CH 30V 13A 8SOIC

MOSFET N-CH 30V 13A 8SOIC

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 016152-FDS6298 FDS6298TR-ND FDS6298 31Y1399 FDS6298 FDS6298
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6298 Single FETs, MOSFETs Single FETs, MOSFETs Mosfet Transistor, N Channel, 13 A, 30 V, 9 Mohm, 10 V, 1.7 V Rohs Compliant Onsemi MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts 30 volts
PD 3000 milliwatts 3000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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