onsemi Single FETs, MOSFETs FDS6298

Description
MOSFET N-CH 30V 13A 8SOIC
Request a Quote Datasheet
Description
MOSFET N-CH 30V 13A 8SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDS6298 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDS6298
Single FETs, MOSFETs FDS6298
MOSFET N-CH 30V 13A 8SOIC

MOSFET N-CH 30V 13A 8SOIC

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6298 - 016152-FDS6298 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6298
016152-FDS6298
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6298 016152-FDS6298
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016152-FDS6298 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Ta) Family Name: FDS6298 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 13A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 14nC @ 5V Max Input Capacitance: 1108pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9 mOhm @ 13A, 10V Alternative Parts (Cross-Reference): HAT2198R-E; SI4420DYTRPBF; Si4420DYPbF; IRF7821PbF; Introduction Date: April 20, 2001 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016152-FDS6298
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta)
Family Name: FDS6298
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 13A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 14nC @ 5V
Max Input Capacitance: 1108pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9 mOhm @ 13A, 10V
Alternative Parts (Cross-Reference): HAT2198R-E; SI4420DYTRPBF; Si4420DYPbF; IRF7821PbF;
Introduction Date: April 20, 2001
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500

Buy Now Datasheet
Single FETs, MOSFETs - FDS6298TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDS6298TR-ND
Single FETs, MOSFETs FDS6298TR-ND
N-Channel 30V 13A (Ta) 3W (Ta) Surface Mount 8-SOIC

N-Channel 30V 13A (Ta) 3W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET
FDS6298
MOSFET FDS6298
MOSFET 30V N-CH Fast SwitCH PwrTrenCH MOSFET

MOSFET 30V N-CH Fast SwitCH PwrTrenCH MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS6298 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDS6298
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDS6298
MOSFET N-CH 30V 13A 8SOIC

MOSFET N-CH 30V 13A 8SOIC

Supplier's Site
Mosfet Transistor, N Channel, 13 A, 30 V, 9 Mohm, 10 V, 1.7 V Rohs Compliant Onsemi - 31Y1399 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 13 A, 30 V, 9 Mohm, 10 V, 1.7 V Rohs Compliant Onsemi
31Y1399
Mosfet Transistor, N Channel, 13 A, 30 V, 9 Mohm, 10 V, 1.7 V Rohs Compliant Onsemi 31Y1399
MOSFET Transistor, N Channel, 13 A, 30 V, 9 mohm, 10 V, 1.7 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 13 A, 30 V, 9 mohm, 10 V, 1.7 V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDS6298 016152-FDS6298 FDS6298TR-ND FDS6298 FDS6298 31Y1399
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6298 Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet Transistor, N Channel, 13 A, 30 V, 9 Mohm, 10 V, 1.7 V Rohs Compliant Onsemi
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts 30 volts
IDSS 13000 milliamps
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