onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6162N7 FDS6162N7

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038387-FDS6162N7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 23A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 73nC @ 4.5V Max Input Capacitance: 5521pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 3.5 mOhm @ 23A, 4.5V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038387-FDS6162N7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 23A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 73nC @ 4.5V Max Input Capacitance: 5521pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 3.5 mOhm @ 23A, 4.5V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6162N7 - 1038387-FDS6162N7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6162N7
1038387-FDS6162N7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6162N7 1038387-FDS6162N7
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038387-FDS6162N7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 23A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 73nC @ 4.5V Max Input Capacitance: 5521pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 3.5 mOhm @ 23A, 4.5V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038387-FDS6162N7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 23A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 73nC @ 4.5V
Max Input Capacitance: 5521pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 3.5 mOhm @ 23A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - FDS6162N7TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDS6162N7TR-ND
Single FETs, MOSFETs FDS6162N7TR-ND
N-Channel 20V 23A (Ta) 3W (Ta) Surface Mount 8-SO

N-Channel 20V 23A (Ta) 3W (Ta) Surface Mount 8-SO

Buy Now Datasheet
Singapore
SMD 20V 23A SOIC MOSFET Transistor
278-FDS6162N7
SMD 20V 23A SOIC MOSFET Transistor 278-FDS6162N7
20V 23A N-CH MOSFET SOIC Surface Mount Product overview: FDS6162N7 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 20V, 23A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 20V, 23A, SOIC, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDS6162N7 can be used for catalog matching and distributor lookup.

20V 23A N-CH MOSFET SOIC Surface Mount Product overview: FDS6162N7 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 20V, 23A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 20V, 23A, SOIC, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDS6162N7 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS6162N7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDS6162N7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDS6162N7
MOSFET N-CH 20V 23A 8SO

MOSFET N-CH 20V 23A 8SO

Supplier's Site
Transistor - 16130429 - Radwell International
Willingboro, NJ, United States
Transistor
16130429
Transistor 16130429
MOSFET; TRANSISTOR TYPE:MOSFET; TRANSISTOR POLARITY:N CHANNEL; DRAIN SOURCE VOLTAGEVDS:20V; CONTINUOUS DRAIN CURRENTID:23A; ON RESISTANCERDS(ON):3. 5MO. FREE 2 YEAR RADWELL WARRANTY

MOSFET; TRANSISTOR TYPE:MOSFET; TRANSISTOR POLARITY:N CHANNEL; DRAIN SOURCE VOLTAGEVDS:20V; CONTINUOUS DRAIN CURRENTID:23A; ON RESISTANCERDS(ON):3.5MO. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Radwell International
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors
Product Number 1038387-FDS6162N7 FDS6162N7TR-ND 278-FDS6162N7 FDS6162N7 16130429
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6162N7 Single FETs, MOSFETs SMD 20V 23A SOIC MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 20 volts
PD 3000 milliwatts 3000 milliwatts
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