onsemi Single FETs, MOSFETs FDS6162N3

Description
N-Channel 20V 21A (Ta) 3W (Ta) Surface Mount 8-SO
Request a Quote Datasheet
Description
N-Channel 20V 21A (Ta) 3W (Ta) Surface Mount 8-SO
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDS6162N3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDS6162N3TR-ND
Single FETs, MOSFETs FDS6162N3TR-ND
N-Channel 20V 21A (Ta) 3W (Ta) Surface Mount 8-SO

N-Channel 20V 21A (Ta) 3W (Ta) Surface Mount 8-SO

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6162N3 - 774483-FDS6162N3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6162N3
774483-FDS6162N3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6162N3 774483-FDS6162N3
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 774483-FDS6162N3 Series: PowerTrench Packaging: Reel package Operating Temperature Range: -55°C ~ 150°C (TJ) Package: 8-SOIC (0.154", 3.90mm Width) Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Part Status: Obsolete(EOL) Family Name: FDS6162N3 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Manufacturer Package: 8-SO Channel Type Type: N Drain Source Voltage: 20V Vgs(th) (Maximum) @ Id: 1.5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 73nC @ 4.5V Input Capacitance (Ciss) (Maximum) @ Vds: 5521pF @ 10V Vgs (Maximum): ±12V Power Dissipation (Maximum): 3W (Ta) Rds On (Maximum) @ Id, Vgs: 4.5 mOhm @ 21A, 4.5V Alternative Parts (Cross-Reference): IRF7836PBF; IRF7836TRPBF; IRF8113; IRF8113PbF-1; Introduction Date: June 24, 2002 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 774483-FDS6162N3
Series: PowerTrench
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-SOIC (0.154", 3.90mm Width)
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Part Status: Obsolete(EOL)
Family Name: FDS6162N3
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Manufacturer Package: 8-SO
Channel Type Type: N
Drain Source Voltage: 20V
Vgs(th) (Maximum) @ Id: 1.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 73nC @ 4.5V
Input Capacitance (Ciss) (Maximum) @ Vds: 5521pF @ 10V
Vgs (Maximum): ±12V
Power Dissipation (Maximum): 3W (Ta)
Rds On (Maximum) @ Id, Vgs: 4.5 mOhm @ 21A, 4.5V
Alternative Parts (Cross-Reference): IRF7836PBF; IRF7836TRPBF; IRF8113; IRF8113PbF-1;
Introduction Date: June 24, 2002
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
MOSFET N-CH 20V 21A 8-SOIC - 598-FDS6162N3 - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 20V 21A 8-SOIC
598-FDS6162N3
MOSFET N-CH 20V 21A 8-SOIC 598-FDS6162N3
MOSFET N-CH 20V 21A 8-SOIC

MOSFET N-CH 20V 21A 8-SOIC

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS6162N3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDS6162N3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDS6162N3
MOSFET N-CH 20V 21A 8SO

MOSFET N-CH 20V 21A 8SO

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDS6162N3TR-ND 774483-FDS6162N3 598-FDS6162N3 FDS6162N3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6162N3 MOSFET N-CH 20V 21A 8-SOIC Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
Package Type "8-SOIC (0.154"", 3.90mm Width) Exposed Pad" SOT3 8-SOIC (0.154, 3.90mm Width) Exposed Pad
PD 3000 milliwatts 3000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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