onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6064N7 FDS6064N7

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 135553-FDS6064N7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 23A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 98nC @ 4.5V Max Input Capacitance: 7191pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 3.5 mOhm @ 23A, 4.5V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 135553-FDS6064N7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 23A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 98nC @ 4.5V Max Input Capacitance: 7191pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 3.5 mOhm @ 23A, 4.5V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6064N7 - 135553-FDS6064N7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6064N7
135553-FDS6064N7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6064N7 135553-FDS6064N7
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 135553-FDS6064N7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 23A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 98nC @ 4.5V Max Input Capacitance: 7191pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 3.5 mOhm @ 23A, 4.5V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 135553-FDS6064N7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 23A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 98nC @ 4.5V
Max Input Capacitance: 7191pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 3.5 mOhm @ 23A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 135553-FDS6064N7
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6064N7
Polarity N-Channel; N-Channel
V(BR)DSS 20 volts
PD 3000 milliwatts
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