onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6064N7 FDS6064N7

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 135553-FDS6064N7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 23A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 98nC @ 4.5V
Max Input Capacitance: 7191pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 3.5 mOhm @ 23A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited

MOSFET N-CH 20V 23A 8-SOIC Product overview: FDS6064N7 from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 23A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 23A, SOIC, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-FDS6064N7 can be used for catalog matching and distributor lookup.