onsemi Single FETs, MOSFETs FDS5682

Description
N-Channel 60V 7.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Request a Quote Datasheet
Description
N-Channel 60V 7.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDS5682TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDS5682TR-ND
Single FETs, MOSFETs FDS5682TR-ND
N-Channel 60V 7.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

N-Channel 60V 7.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Singapore
60V 7.5A SOIC MOSFET Transistor
278-FDS5682
60V 7.5A SOIC MOSFET Transistor 278-FDS5682
MOSFET N-CH 60V 7.5A 8-SOIC Product overview: FDS5682 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 7.5A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 7.5A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDS5682 can be used for catalog matching and distributor lookup.

MOSFET N-CH 60V 7.5A 8-SOIC Product overview: FDS5682 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 7.5A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 7.5A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDS5682 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - FDS5682 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDS5682
Single FETs, MOSFETs FDS5682
MOSFET N-CH 60V 7.5A 8SOIC

MOSFET N-CH 60V 7.5A 8SOIC

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS5682 - 016149-FDS5682 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS5682
016149-FDS5682
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS5682 016149-FDS5682
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016149-FDS5682 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 7.5A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 35nC @ 10V Max Input Capacitance: 1650pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 21 mOhm @ 7.5A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016149-FDS5682
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 7.5A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 35nC @ 10V
Max Input Capacitance: 1650pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 21 mOhm @ 7.5A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS5682 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDS5682
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDS5682
MOSFET N-CH 60V 7.5A 8SOIC

MOSFET N-CH 60V 7.5A 8SOIC

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDS5682TR-ND 278-FDS5682 FDS5682 016149-FDS5682 FDS5682
Product Name Single FETs, MOSFETs 60V 7.5A SOIC MOSFET Transistor Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS5682 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type "8-SOIC (0.154"", 3.90mm Width)" 8-SOIC (0.154", 3.90mm Width) SOT3; 8-SO 8-SOIC (0.154, 3.90mm Width)
PD 2500 milliwatts 2500 milliwatts 2500 milliwatts
TJ -55 C (-67 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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