Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 141268-FDS5672
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 2200pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10 mOhm @ 12A, 10V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Industrial
Quantity per package: 2,500
N-Channel 60V 12A (Tc) 2.5W (Ta) Surface Mount 8-SOIC
N-Channel 60V 12A (Tc) 2.5W (Ta) Surface Mount 8-SOIC
N-Channel 60V 12A (Tc) 2.5W (Ta) Surface Mount 8-SOIC
MOSFETs 60V 12A 10 OHM NCH POWER TRENCH MOSFET Product overview: FDS5672 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 12A, 10 OHM. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 12A, 10 OHM, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDS5672 can be used for catalog matching and distributor lookup.
MOSFET N-CH 60V 12A 8SOIC
MOSFET N-CH 60V 12A 8SOIC
MOSFET 60V 12A 10 OHM NCH POWER TRENCH MOSFET
MOSFET Transistor, N Channel, 12 A, 60 V, 0.0088 ohm, 10 V, 4 V RoHS Compliant: Yes
| Win Source Electronics | DigiKey | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 141268-FDS5672 | FDS5672CT-ND | 6710542 | 6710542P | 2088-FDS5672 | FDS5672 | FDS5672 | FDS5672 | 53Y3195 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS5672 | Single FETs, MOSFETs | MOSFETs | MOSFETs | 60V 12A 10 OHM MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet Transistor, N Channel, 12 A, 60 V, 0.0088 Ohm, 10 V, 4 V Rohs Compliant Onsemi |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 60 volts | 60 volts | |||||||
| PD | 2500 milliwatts | 2.5 milliwatts | 2500 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||||
| Package Type | SOT3; 8-SO | "8-SOIC (0.154"", 3.90mm Width)" | Soic | SOIC | Reel | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154, 3.90mm Width) | TO-3 |
