onsemi Single FETs, MOSFETs FDS5672

Description
MOSFET N-CH 60V 12A 8SOIC
Request a Quote Datasheet
Description
MOSFET N-CH 60V 12A 8SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDS5672 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDS5672
Single FETs, MOSFETs FDS5672
MOSFET N-CH 60V 12A 8SOIC

MOSFET N-CH 60V 12A 8SOIC

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS5672 - 141268-FDS5672 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS5672
141268-FDS5672
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS5672 141268-FDS5672
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 141268-FDS5672 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 12A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 45nC @ 10V Max Input Capacitance: 2200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10 mOhm @ 12A, 10V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Industrial Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 141268-FDS5672
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 2200pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10 mOhm @ 12A, 10V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Industrial
Quantity per package: 2,500

Buy Now Datasheet
Single FETs, MOSFETs - FDS5672CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDS5672CT-ND
Single FETs, MOSFETs FDS5672CT-ND
N-Channel 60V 12A (Tc) 2.5W (Ta) Surface Mount 8-SOIC

N-Channel 60V 12A (Tc) 2.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - FDS5672DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDS5672DKR-ND
Single FETs, MOSFETs FDS5672DKR-ND
N-Channel 60V 12A (Tc) 2.5W (Ta) Surface Mount 8-SOIC

N-Channel 60V 12A (Tc) 2.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - FDS5672TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDS5672TR-ND
Single FETs, MOSFETs FDS5672TR-ND
N-Channel 60V 12A (Tc) 2.5W (Ta) Surface Mount 8-SOIC

N-Channel 60V 12A (Tc) 2.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
MOSFETs - 6710542 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
6710542
MOSFETs 6710542
MOSFET N-Channel 60V 12A SOIC8

MOSFET N-Channel 60V 12A SOIC8

Supplier's Site
MOSFETs - 6710542P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
6710542P
MOSFETs 6710542P
MOSFET N-Channel 60V 12A SOIC8

MOSFET N-Channel 60V 12A SOIC8

Supplier's Site
MOSFETs - 1241710 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1241710
MOSFETs 1241710
MOSFET N-Channel 60V 12A SOIC8

MOSFET N-Channel 60V 12A SOIC8

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FDS5672
MOSFET FDS5672
MOSFET 60V 12A 10 OHM NCH POWER TRENCH MOSFET

MOSFET 60V 12A 10 OHM NCH POWER TRENCH MOSFET

Buy Now Datasheet
Mosfet Transistor, N Channel, 12 A, 60 V, 0.0088 Ohm, 10 V, 4 V Rohs Compliant Onsemi - 53Y3195 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 12 A, 60 V, 0.0088 Ohm, 10 V, 4 V Rohs Compliant Onsemi
53Y3195
Mosfet Transistor, N Channel, 12 A, 60 V, 0.0088 Ohm, 10 V, 4 V Rohs Compliant Onsemi 53Y3195
MOSFET Transistor, N Channel, 12 A, 60 V, 0.0088 ohm, 10 V, 4 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 12 A, 60 V, 0.0088 ohm, 10 V, 4 V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS5672 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDS5672
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDS5672
MOSFET N-CH 60V 12A 8SOIC

MOSFET N-CH 60V 12A 8SOIC

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey RS Components, Ltd. RS Components, Ltd. VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDS5672 141268-FDS5672 FDS5672CT-ND 6710542 6710542P FDS5672 53Y3195 FDS5672
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS5672 Single FETs, MOSFETs MOSFETs MOSFETs MOSFET Mosfet Transistor, N Channel, 12 A, 60 V, 0.0088 Ohm, 10 V, 4 V Rohs Compliant Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 60 volts 60 volts
IDSS 12000 milliamps
PD 2500 milliwatts 2500 milliwatts
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3 suppliers