onsemi FET, MOSFET Arrays FDS4953

Description
MOSFET 2P-CH 30V 5A 8SOIC
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Description
MOSFET 2P-CH 30V 5A 8SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - FDS4953 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
FDS4953
FET, MOSFET Arrays FDS4953
MOSFET 2P-CH 30V 5A 8SOIC

MOSFET 2P-CH 30V 5A 8SOIC

Supplier's Site Datasheet
FET, MOSFET Arrays - FDS4953TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDS4953TR-ND
FET, MOSFET Arrays FDS4953TR-ND
Mosfet Array 2 P-Channel (Dual) 30V 5A 900mW Surface Mount 8-SOIC

Mosfet Array 2 P-Channel (Dual) 30V 5A 900mW Surface Mount 8-SOIC

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS4953 - 139332-FDS4953 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS4953
139332-FDS4953
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS4953 139332-FDS4953
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 139332-FDS4953 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 900mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 5A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 9nC @ 5V Max Input Capacitance: 528pF @ 15V Maximum Rds On at Id,Vgs: 55 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Industrial

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 139332-FDS4953
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 5A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 9nC @ 5V
Max Input Capacitance: 528pF @ 15V
Maximum Rds On at Id,Vgs: 55 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Industrial

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS4953 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDS4953
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDS4953
MOSFET 2P-CH 30V 5A 8SOIC

MOSFET 2P-CH 30V 5A 8SOIC

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDS4953 FDS4953TR-ND 139332-FDS4953 FDS4953
Product Name FET, MOSFET Arrays FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS4953 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; 2 P-Channel (Dual) P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts 30 volts
IDSS 5000 milliamps
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