MOSFET N/P-CH 40V 6.2/4.4A 8SOIC
SMALL SIGNAL FIELD-EFFECT TRANSI
MOSFETs 40V Dual N & P-Ch PowerTrench MOSFET Product overview: FDS4897C from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 40V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 40V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDS4897C can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016144-FDS4897C
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Family Name: FDS4897C
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 6.2A, 4.4A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 760pF @ 20V
Maximum Rds On at Id,Vgs: 29 mOhm @ 6.2A, 10V
Alternative Parts (Cross-Reference): Si4599DY-T1-GE3; Si4599DY; DMC4047LSD-13;
Introduction Date: December 01, 2005
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500
Mosfet Array N and P-Channel 40V 6.2A, 4.4A 900mW Surface Mount 8-SOIC
Mosfet Array N and P-Channel 40V 6.2A, 4.4A 900mW Surface Mount 8-SOIC
Mosfet Array N and P-Channel 40V 6.2A, 4.4A 900mW Surface Mount 8-SOIC
MOSFET N/P-CH 40V 6.2A 8SOIC
MOSFET, N & P-CH, 40V, 6.2A, SOIC-8; Transistor Polarity:Complementa
MOSFET 40V Dual N & P-Ch PowerTrench MOSFET
| ODG (Origin Data Global) | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDS4897C | FDS4897C | 2088-FDS4897C | 016144-FDS4897C | FDS4897CTR-ND | FDS4897C | 31Y1398 | FDS4897C |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | Dual 40V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS4897C | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N & P-Ch, 40V, 6.2A, Soic-8; Transistor Polarity Onsemi | MOSFET |
| Polarity | P-Channel; N and P-Channel | P-Channel; N and P-Channel | N-Channel; P-Channel | P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 40 volts | 40 volts | 40 volts | |||||
| IDSS | 6200 milliamps | 6200 milliamps | 6200 milliamps | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
