Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016143-FDS4685
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta)
Family Name: FDS4685
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 8.2A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 27nC @ 5V
Max Input Capacitance: 1872pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 27 mOhm @ 8.2A, 10V
Alternative Parts (Cross-Reference): STS7P4LLF6; AP9564GM-HF; TPC8110(TE12L,M); TPC8110(T2LTAMRS,Q;
Introduction Date: May 11, 2005
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management, Industrial
Quantity per package: 2,500
P-Channel 40V 8.2A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
P-Channel 40V 8.2A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
P-Channel 40V 8.2A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
MOSFET 40V PCH POWER TRENCH MOSFET
MOSFET P-CH 40V 8.2A 8SOIC
P CHANNEL MOSFET, -40V, -8.2A, SO-8, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:8.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:2.5W RoHS Compliant: Yes
MOSFET Transistor, P Channel, -8.2 A, -40 V, 0.022 ohm, -10 V, -1.6 V RoHS Compliant: Yes
P CHANNEL MOSFET, -40V, -8.2A, SO-8; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:8.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.6V RoHS Compliant: Yes
| RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 6710520 | 6710520P | 016143-FDS4685 | FDS4685CT-ND | FDS4685 | FDS4685 | 67K3245 | 87X8733 | 15R3430 |
| Product Name | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS4685 | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | P Channel Mosfet, -40V, -8.2A, So-8, Full Reel; Channel Type Onsemi | Mosfet Transistor, P Channel, -8.2 A, -40 V, 0.022 Ohm, -10 V, -1.6 V Rohs Compliant Onsemi | P Channel Mosfet, -40V, -8.2A, So-8; Channel Type Onsemi |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | ||
| V(BR)DSS | 40 volts | 40 volts | 40 volts | ||||||
| IDSS | 8200 milliamps | 8200 milliamps | 8200 milliamps | 8200 milliamps | |||||
| rDS(on) | 0.0270 ohms | 0.0270 ohms | |||||||
| Package Type | SOIC | SOIC | SOT3; 8-SO | "8-SOIC (0.154"", 3.90mm Width)" | 8-SOIC (0.154, 3.90mm Width) | TO-3; SO-8 | TO-3 | TO-3; SO-8 |
